Development of Silicon Carbide Coating on Al2O3 Ceramics from Precursor Polymers by Radiation Curing

Radoslaw A. Wach; Masaki Sugimoto; Masahito Yoshikawa

doi:10.4028/www.scientific.net/KEM.317-318.573

Paper Titles

Comparison of Water Vapor Corrosion Behaviors of Ln₂Si₂O₇ (Ln=Yb and Lu) and ASiO₄ (A=Ti, Zr and Hf) EBC's
p.557

Characterization and Photocatalytic Properties of Plasma Sprayed TiO₂ Coatings Deposited from Nanoparticles
p.561

Titania Nanocrystals-Dispersed Coatings from SiO₂-TiO₂ Gel Films through Hydrolysis and Dissolution
p.565

Preparation and Characterization of Titania Thin Films
p.569

Development of Silicon Carbide Coating on Al₂O₃ Ceramics from Precursor Polymers by Radiation Curing
p.573

Accelerated Degradation Test of Indium Tin Oxide (ITO) Thin Films Deposited by RF Magnetron Sputter
p.577

Local Acceleration Effects of Adatom at the Vicinity on the Surface: Case of Co Nano Thin-Films on Al Surface
p.581

Laser-Assisted Synthesis of Amorphous/Pseudoamorphous GaN Thin Films and Nanostructures
p.585

The Effects of Nitrogen and Annealing on the Electrical Property of the Diamond-Like Carbon (DLC) Films
p.589

HomeKey Engineering MaterialsKey Engineering Materials Vols. 317-318Development of Silicon Carbide Coating on Al2O3...

Development of Silicon Carbide Coating on Al₂O₃ Ceramics from Precursor Polymers by Radiation Curing

Abstract:

Production of reinforced surface ceramic material was investigated by radiation curing-oxidation method. The originality of this research is to use along with polycarbosilane (PCS) an admixture of another preceramic polymer, polyvinylsilane (PVS). PCS, PVS or their combination in cyclohexane solution were spin-coated onto Al2O3 plates or deposited onto porous substrate by dipping method. After radiation oxidation step, used to preserve the coat on the substrate, a heat treatment was applied for crosslinking of the polymer. Thickness and quality of silicon carbide (SiC) film were investigated after pyrolysis.