Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition

Abstract:

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In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

Info:

Periodical:

Key Engineering Materials (Volumes 321-323)

Edited by:

Seung-Seok Lee, Joon Hyun Lee, Ik Keun Park, Sung-Jin Song, Man Yong Choi

Pages:

1687-1690

DOI:

10.4028/www.scientific.net/KEM.321-323.1687

Citation:

H. J. Kim, D. Y. Jang, P. K. Shishodia, A. Yoshida, "Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition", Key Engineering Materials, Vols. 321-323, pp. 1687-1690, 2006

Online since:

October 2006

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$35.00

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