Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

Abstract:

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Ion-beam sputtering deposition is a physical deposited method which uses accelerated ionbeam to sputter oxide or metal targets, and deposits atoms on substrate. Thin films of yttrium-stabilized zirconia (YSZ) were deposited on Si (100) wafer and NiO/YSZ plate. Scanning electron microscopy and transmission electron microscopy with EDS were employed to study the microstructural and chemically stoichiometric results of the films and the crystal growth process by various heat treatments. X-ray diffraction was also used to analysis crystalline phase of the YSZ films. The influence of different targets, substrates deposited efficiency and the properties of the film will be presented and discussed.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

1788-1790

DOI:

10.4028/www.scientific.net/KEM.336-338.1788

Citation:

Y. J. Chen and W. C. J. Wei, "Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)", Key Engineering Materials, Vols. 336-338, pp. 1788-1790, 2007

Online since:

April 2007

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$35.00

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