Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

Yu Ju Chen; Wen Cheng J. Wei

doi:10.4028/www.scientific.net/KEM.336-338.1788

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 336-338Investigation of YSZ Thin Films on Silicon Wafer...

Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

Abstract:

Ion-beam sputtering deposition is a physical deposited method which uses accelerated ionbeam to sputter oxide or metal targets, and deposits atoms on substrate. Thin films of yttrium-stabilized zirconia (YSZ) were deposited on Si (100) wafer and NiO/YSZ plate. Scanning electron microscopy and transmission electron microscopy with EDS were employed to study the microstructural and chemically stoichiometric results of the films and the crystal growth process by various heat treatments. X-ray diffraction was also used to analysis crystalline phase of the YSZ films. The influence of different targets, substrates deposited efficiency and the properties of the film will be presented and discussed.

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Periodical:

Key Engineering Materials (Volumes 336-338)

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1788-1790

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.336-338.1788

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Online since:

April 2007

Authors:

Yu Ju Chen, Wen Cheng J. Wei

Keywords:

IBSD, Solid Oxide Fuel Cell (SOFC), Sputtering, Thin Film, YSZ

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