A Novel Ceramic Pressure Sensor

Yun Wan; Pin Wan

doi:10.4028/www.scientific.net/KEM.336-338.772

Paper Titles

Study of In₂O₃ Thin Films Prepared on TiN Substrates Using a Triethylindium and Oxygen Mixture
p.760

Resistivity-Temperature Properties of La(Ti_xMn_1-x)O₃ Ceramics
p.763

Control of Shrinkage Behavior and Thermal Expansion Coefficient in BaTiO₃-Added Ni Electrodes
p.765

Fabrication of Heater Element in Release System
p.769

A Novel Ceramic Pressure Sensor
p.772

Effect of Treatment Process on the Structure and Properties of Sr_0.48Ba_0.24Ca_0.28TiO₃-Based Varistor Ceramics
p.775

Microstructure and Properties of Ni_0.5Zn_0.5Fe₂O₄-BaTiO₃ Ceramic
p.779

Dielectric Properties of LTCC System of Al₂O₃ and Borosilicate Glass
p.783

Fabrication of BN-AlN-TiB₂ Compound Conductive Ceramics by Self-Propagating High Temperature Synthesis and Hot Isostatic Pressing
p.786

HomeKey Engineering MaterialsKey Engineering Materials Vols. 336-338A Novel Ceramic Pressure Sensor

A Novel Ceramic Pressure Sensor

Abstract:

Constantan thin film was deposited on Al2O3 substrate by vacuum evaporation technology and semiconductor ordinary photolithography to form the sensitive bar of strain-resistance pressure sensor. The static characteristics of the resultant ceramic sensor were measured and the results showed that the linearity, repetition properties, return error and the creep of the ceramics pressure sensor are more excellent than the conventional sensor.