Study of In2O3 Thin Films Prepared on TiN Substrates Using a Triethylindium and Oxygen Mixture
Indium oxide (In2O3) films was deposited on TiN substrates by the metal organic chemical vapor deposition technique using a triethylindium and oxygen mixture. The films deposited at 250-350°C were polycrystalline, while that deposited at 200°C was close to amorphous. XRD and SEM analyses indicated that the films grown at 350°C had grained structures with the (222) preferred orientation.
Wei Pan and Jianghong Gong
H. W. Kim and J. H. Myung, "Study of In2O3 Thin Films Prepared on TiN Substrates Using a Triethylindium and Oxygen Mixture", Key Engineering Materials, Vols. 336-338, pp. 760-762, 2007