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Study of In2O3 Thin Films Prepared on TiN Substrates Using a Triethylindium and Oxygen Mixture

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Abstract:

Indium oxide (In2O3) films was deposited on TiN substrates by the metal organic chemical vapor deposition technique using a triethylindium and oxygen mixture. The films deposited at 250-350°C were polycrystalline, while that deposited at 200°C was close to amorphous. XRD and SEM analyses indicated that the films grown at 350°C had grained structures with the (222) preferred orientation.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Pages:

760-762

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.336-338.760

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Online since:

April 2007

Authors:

Hyoun Woo Kim, Ju Hyun Myung

Keywords:

Indium Oxide, MOCVD, Thin Film

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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