Study of In2O3 Thin Films Prepared on TiN Substrates Using a Triethylindium and Oxygen Mixture

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Indium oxide (In2O3) films was deposited on TiN substrates by the metal organic chemical vapor deposition technique using a triethylindium and oxygen mixture. The films deposited at 250-350°C were polycrystalline, while that deposited at 200°C was close to amorphous. XRD and SEM analyses indicated that the films grown at 350°C had grained structures with the (222) preferred orientation.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

760-762

DOI:

10.4028/www.scientific.net/KEM.336-338.760

Citation:

H. W. Kim and J. H. Myung, "Study of In2O3 Thin Films Prepared on TiN Substrates Using a Triethylindium and Oxygen Mixture", Key Engineering Materials, Vols. 336-338, pp. 760-762, 2007

Online since:

April 2007

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$35.00

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