Fabrication of HfO2 Thin Film on Si Substrate by Double-Pulse Excitation PLD

Tomohiro Tabara; Naoki Wakiya; Takanori Kiguchi; M. Tanaka; Kazuo Shinozaki

doi:10.4028/www.scientific.net/KEM.350.129

Paper Titles

Fabrication and Microstructural Change of PMN-PT Thin Films on Si Substrates by PLD with Mask and Double-Pulse Lazer Excitation
p.111

Preparation of Bi₄Ti₃O₁₂ Based Thick Films by Screen Printing
p.115

Figure of Merit for Thermoelectric Generation Obtained by Enhanced Transport Properties of [100] Oriented Beta-FeSi₂ Film
p.121

Fabrication and Application of MoSi₂-Thin-Film Electric Heaters
p.125

Fabrication of HfO₂ Thin Film on Si Substrate by Double-Pulse Excitation PLD
p.129

Morphology Control of Zirconia Thin Films Prepared Using Photochromic Precursors
p.133

Electrochemical Properties of Lithium Titanate Synthesized by Reassembly of Nanosheets
p.139

CO₂ Absorption Properties of Barium Orthotitanate under Continuous Operation
p.143

Investigation of the Oxide Ion Conduction Mechanism in LaGaO₃-Based Electrolytes through High-Temperature Neutron Powder Diffraction
p.147

HomeKey Engineering MaterialsKey Engineering Materials Vol. 350Fabrication of HfO2 Thin Film on Si Substrate by...

Fabrication of HfO₂ Thin Film on Si Substrate by Double-Pulse Excitation PLD

Abstract:

Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10-1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.