Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials

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We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr2O3-x layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr2O3-x layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system.

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Periodical:

Edited by:

K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki

Pages:

221-224

Citation:

T. Yokota et al., "Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials", Key Engineering Materials, Vol. 350, pp. 221-224, 2007

Online since:

October 2007

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$38.00

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