Magnetic and Dielectric Properties of a Metal/ Cr₂O₃/Cr₂O_3-x/Cr₂O₃/Semiconductor Capacitor Using Magneto-Electric Materials

Abstract:

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr2O3-x layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr2O3-x layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system.

• Periodical: Key Engineering Materials (Volume 350)
• Pages: 221-224
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.350.221
• Online since: October 2007
• Authors: Takeshi Yokota, Takaaki Kuribayashi, Takeshi Shundo, Keita Hattori, Yasutoshi Sakakibara, Manabu Gomi
• Keywords: Capacitance Measurement, Dielectric Property, FET, Magnetic Property, Magneto-Electric Effect, MIS Devices

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