Syntheisis and Characterization of Bismuth Tungstate Crystals by Solution Growth Technique

Masaya  Nishida; Hiroaki Takeda; Takashi Nishida; Tadashi Shiosaki

doi:10.4028/www.scientific.net/KEM.350.81

Paper Titles

Ferroelectric Distortion in Bi₄Ti₃O₁₂ Studied by Neutron Powder Diffraction
p.65

Domain Dynamics of C-Axis Polarization in Bismuth Titanate Crystals
p.69

Electromechanical Poling Treatment of Barium Titanate Single Crystals and their Piezoelectric Properties
p.73

Defects and Leakage Current in PbTiO₃ Single Crystals
p.77

Syntheisis and Characterization of Bismuth Tungstate Crystals by Solution Growth Technique
p.81

Defect Control for Superior Properties in K_0.5Na_0.5NbO₃ Single Crystals
p.85

Introduction of Fine Engineered Domain Configuration into Potassium Niobate Single Crystals
p.89

Phase Transition Temperatures of Divalent and Trivalent Ions Substituted (Bi_1/2Na_1/2)TiO₃ Ceramics
p.93

Crystal Phase and Orientation Dependence of Electro-Optic Effect in Epitaxial PLZT an PZT Films
p.99

HomeKey Engineering MaterialsKey Engineering Materials Vol. 350Syntheisis and Characterization of Bismuth...

Syntheisis and Characterization of Bismuth Tungstate Crystals by Solution Growth Technique

Abstract:

Growth of ferroelectric Bi2WO6 (BWO) mono-domain bulk crystals was attempted by the vertical-Bridgman (VB) method below the phase transition (ferro- to paraelectric) temperature of 940oC using Li2B4O7 as a flux. In this method, Pt crucibles with different shapes were used. The crucible with a wedged tip bottom produced BWO crystal with a thickness of over 4 mm along the crystallographic c-axis (perpendicular to the spontaneous polarization axis). Using BWO mono-domain crystals grown by slow cooling technique, on the other hand, their electric properties were characterized. The dielectric constants, ε ij, and electromechanical coupling factor, k33, of the crystals were 70-100 and 36% at room temperature, respectively.

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Key Engineering Materials (Volume 350)

Pages:

81-84

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.350.81

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Online since:

October 2007

Authors:

Masaya Nishida, Hiroaki Takeda, Takashi Nishida, Tadashi Shiosaki

Keywords:

High Curie Temperature, Bismuth Layered-Structure Ferroelectrics, Crystal Growth, Mono-Domain, Piezoelectricity

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