Syntheisis and Characterization of Bismuth Tungstate Crystals by Solution Growth Technique

Abstract:

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Growth of ferroelectric Bi2WO6 (BWO) mono-domain bulk crystals was attempted by the vertical-Bridgman (VB) method below the phase transition (ferro- to paraelectric) temperature of 940oC using Li2B4O7 as a flux. In this method, Pt crucibles with different shapes were used. The crucible with a wedged tip bottom produced BWO crystal with a thickness of over 4 mm along the crystallographic c-axis (perpendicular to the spontaneous polarization axis). Using BWO mono-domain crystals grown by slow cooling technique, on the other hand, their electric properties were characterized. The dielectric constants, ε ij, and electromechanical coupling factor, k33, of the crystals were 70-100 and 36% at room temperature, respectively.

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Periodical:

Edited by:

K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki

Pages:

81-84

DOI:

10.4028/www.scientific.net/KEM.350.81

Citation:

M. Nishida et al., "Syntheisis and Characterization of Bismuth Tungstate Crystals by Solution Growth Technique", Key Engineering Materials, Vol. 350, pp. 81-84, 2007

Online since:

October 2007

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$35.00

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