Syntheisis and Characterization of Bismuth Tungstate Crystals by Solution Growth Technique
Growth of ferroelectric Bi2WO6 (BWO) mono-domain bulk crystals was attempted by the vertical-Bridgman (VB) method below the phase transition (ferro- to paraelectric) temperature of 940oC using Li2B4O7 as a flux. In this method, Pt crucibles with different shapes were used. The crucible with a wedged tip bottom produced BWO crystal with a thickness of over 4 mm along the crystallographic c-axis (perpendicular to the spontaneous polarization axis). Using BWO mono-domain crystals grown by slow cooling technique, on the other hand, their electric properties were characterized. The dielectric constants, ε ij, and electromechanical coupling factor, k33, of the crystals were 70-100 and 36% at room temperature, respectively.
K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki
M. Nishida et al., "Syntheisis and Characterization of Bismuth Tungstate Crystals by Solution Growth Technique", Key Engineering Materials, Vol. 350, pp. 81-84, 2007