Epitaxial Growth of B-Axis Oriented BaTi₂O₅ Films by Laser Ablation

Abstract:

A new lead-free ferroelectric BaTi2O5 film was first prepared by laser ablation. BaTi2O5 films in a single phase were obtained at substrate temperatures (Tsub) from 900 to 1050 K and oxygen partial pressures (PO2) from vacuum (10-6 Pa) to 30 Pa. The films exhibited a (710) and/or (020) preferred orientation, depending on Tsub and PO2. At PO2 = 12.5 Pa and Tsub = 950 - 1000 K, the BaTi2O5 film was b-axis oriented and epitaxially grown on MgO (100) substrate with a rectangularly crossed texture. The epitaxial growth relationship between the film and the substrate were BaTi2O5 (020) [100] // MgO (100) [001] and BaTi2O5 (020) [100] // MgO (100) [010].

• Periodical: Key Engineering Materials (Volume 352)
• Pages: 311-314
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.352.311
• Online since: August 2007
• Authors: Chuan Bin Wang, Rong Tu, Takashi Goto
• Keywords: BaTi₂O₅ Film, B-Axis Orientation, Epitaxial Growth, Laser Ablation

References

[1] T. Akashi, H. Iwata and T. Goto: Materials Transaction Vol. 44 (2003), p.802.

[2] T. Akashi, H. Iwata and T. Goto: Materials Transactions Vol. 44 (2003), p.1644.

[3] Y. Akishige: Jpn. J. Appl. Phys. Vol. 44 (2005), p.7144.

[4] Y. Akishige, K. Fukano and H. Shigematsu: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L946.

[5] Q. X. Jia, L. H. Chang and W. A. Anderson: J. Electronic Mater. Vol. 23 (1994), p.551.

[6] S. Hirano, T. Yogo and K. Kikuta: J. Am. Ceram. Soc. Vol. 75 (1992), p.1697.

[7] T. Hayashi and T. Tanaka: Jpn. J. Appl. Phys. Vol. 34 (1995), p.5100.

[8] X. W. Xi, Y. J. Chen and X. Y. Zhang: Vacuum Vol. 75 (2004), p.161.

[9] M. G. Norton and C. B. Carter: J. Mater. Res. Vol. 5 (1990), p.2762.

[10] T. Kimura, T. Goto, H. Yamane, H. Iwata, T. Kajiwara and T. Akashi: Acta Cryst. Vol. C59 (2003), p. i128.