Epitaxial Growth of B-Axis Oriented BaTi2O5 Films by Laser Ablation

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A new lead-free ferroelectric BaTi2O5 film was first prepared by laser ablation. BaTi2O5 films in a single phase were obtained at substrate temperatures (Tsub) from 900 to 1050 K and oxygen partial pressures (PO2) from vacuum (10-6 Pa) to 30 Pa. The films exhibited a (710) and/or (020) preferred orientation, depending on Tsub and PO2. At PO2 = 12.5 Pa and Tsub = 950 - 1000 K, the BaTi2O5 film was b-axis oriented and epitaxially grown on MgO (100) substrate with a rectangularly crossed texture. The epitaxial growth relationship between the film and the substrate were BaTi2O5 (020) [100] // MgO (100) [001] and BaTi2O5 (020) [100] // MgO (100) [010].

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Periodical:

Edited by:

Katsutoshi Komeya, Yohtaro Matsuo and Takashi Goto

Pages:

311-314

DOI:

10.4028/www.scientific.net/KEM.352.311

Citation:

C. B. Wang et al., "Epitaxial Growth of B-Axis Oriented BaTi2O5 Films by Laser Ablation", Key Engineering Materials, Vol. 352, pp. 311-314, 2007

Online since:

August 2007

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$35.00

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