Study on Contact Mechanism of Interface in Wafer CMP Based on Abrasion Behavior

Jian Xiu Su; Xue Liang Zhang; Xi Qu Chen; Jia Xi Du; Dong Ming Guo

doi:10.4028/www.scientific.net/KEM.359-360.254

Paper Titles

Surface and Sub-Surface Integrity of Ultra- Machined BK7 Using Fine and Coarse Grained Diamond Wheels
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Experiment Study on Residual Stresses Based on Quick-Point Grinding with Vitrified CBN Wheel
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Experimental Investigation into Surface Integrity Finished by Abrasive Jet with Grinding Wheel as Restraint
p.244

Lapping Process of Diamond Cutting Tool by Molecular Dynamics Simulating
p.249

Study on Contact Mechanism of Interface in Wafer CMP Based on Abrasion Behavior
p.254

Design of Surface Finish Using Synchronous Process of Grinding and Electrochemical Finishing
p.259

Hydrodynamic Analysis of Circular Translational Polishing under Mixed Lubrication
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Research on Nanoscale Material Removal Process Using Atomic Force Microscopy
p.269

Experimental Study of Precision Polishing of Hard and Brittle Material
p.274

HomeKey Engineering MaterialsKey Engineering Materials Vols. 359-360Study on Contact Mechanism of Interface in Wafer...

Study on Contact Mechanism of Interface in Wafer CMP Based on Abrasion Behavior

Abstract:

Right getting hold of the contact form between the wafer and the pad is the precondition of fully understanding the material removal mechanism in wafer chemical mechanical polishing (CMP) process. In this paper, according to friction and abrasion theory, the differentiating method of contact form between the wafer and the pad has been obtained firstly. Then, the material removal rate (MRR) produced by mechanical action, chemical action and their interaction has been achieved by test results of MRR. According to analysis on test results of MRR, it is concluded that the mechanical action produced by abrasives is the main mechanical action, the MRR produced by the interaction between the mechanical action of abrasives and chemical action of slurry is the main MRR and the contact form between the wafer and the pad is solid-solid contact in wafer CMP. These results will provide theoretical guide to further understand the material removal mechanism of in wafer CMP.

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Periodical:

Key Engineering Materials (Volumes 359-360)

Pages:

254-258

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.359-360.254

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Online since:

November 2007

Authors:

Jian Xiu Su, Xue Liang Zhang, Xi Qu Chen, Jia Xi Du, Dong Ming Guo

Keywords:

Abrasive Abrasion, Chemical Mechanical Polishing (CMP), Contact Form, Material Removal Mechanism, Material Removal Rate (MRR)

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References

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