Crystal Growth and Ferroelectric Properties of Superlattice-Structured Bi4Ti3O12-PbBi4Ti4O15 Single Crystals
Superlattice-structured Bi4Ti3O12- PbBi4Ti4O15 single crystals were grown, and their properties of polarization hysteresis and leakage current along the a axis were investigated. Oxidation annealing led to a marked increase in leakage current, while annealing in N2 atmosphere yielded a marked decrease in leakage current at room temperature. These results show that electron hole is the dominant carrier for the leakage current. A well-saturated polarization hysteresis with a remanent polarization of 41 μC/cm2 was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi2O2 layers.
Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
M. Ikezaki et al., "Crystal Growth and Ferroelectric Properties of Superlattice-Structured Bi4Ti3O12-PbBi4Ti4O15 Single Crystals", Key Engineering Materials, Vol. 388, pp. 237-240, 2009