Crystal Growth and Ferroelectric Properties of Superlattice-Structured Bi4Ti3O12-PbBi4Ti4O15 Single Crystals

Article Preview

Abstract:

Superlattice-structured Bi4Ti3O12- PbBi4Ti4O15 single crystals were grown, and their properties of polarization hysteresis and leakage current along the a axis were investigated. Oxidation annealing led to a marked increase in leakage current, while annealing in N2 atmosphere yielded a marked decrease in leakage current at room temperature. These results show that electron hole is the dominant carrier for the leakage current. A well-saturated polarization hysteresis with a remanent polarization of 41 μC/cm2 was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi2O2 layers.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

237-240

Citation:

Online since:

September 2008

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2009 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] K. Sakata, T. Takenaka, and K. Shoji, Ferroelectrics, 22, (1978), p.825.

Google Scholar

[2] T. Takenaka and K. Sakata, Jpn. J. Appl. Phys., 19, (1980), p.31.

Google Scholar

[3] J. F. Scott and C. A. Paz de Araujo, Science, 246, (1989), p.1400.

Google Scholar

[4] B Aurivillius, Arkiv Kemi, 1, (1949), p.499.

Google Scholar

[5] C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature, 374, (1995), p.627.

Google Scholar

[6] B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee , and W. Joe, Nature, 401, (1999), P. 682.

Google Scholar

[7] T. Kikuchi, A. Watanabe, and K. Uchida, Mater. Res. Bull., 12, (1977), p.299.

Google Scholar

[8] Y. Noguchi, M. Miyayama, and T. Kudo, Appl. Phys. Lett., 77, (2000), p.3639.

Google Scholar

[9] A. Shibuya, M. Noda, M. Okuyama, H. Fujisawa, and M. Shimizu, Appl. Phys. Lett., 82, (2003), p.784.

Google Scholar

[10] R. Maalal, R. Muhll, G. Trolliard, and J. P. Mercurio, J. Phys. Chem. Solid, 57, (1996), p. (1957).

Google Scholar

[11] Y. Goshima, Y. Noguchi, and M. Miyayama, Appl. Phys. Lett., 81, (2002), p.2226.

Google Scholar

[12] T. Kobayashi, Y. Noguchi, and M. Miyayama, Jpn. J. Appl. Phys., 43, (2004), p.6653.

Google Scholar

[13] S. E. Cummins and L. E. Cross, J. Appl. Phys., 39, (1968), p.2268.

Google Scholar

[14] H. Irie, M. Miyayama, and T. Kudo, J. Appl. Phys., 90, (2001), p.4089.

Google Scholar

[15] M. Miyayama and I. S. Yi, Ceram. Int., 26, (2000), p.529.

Google Scholar

[16] Y. Noguchi, T. Matsumoto, and M. Miyayama, Jpn. J. Appl. Phys., 44, (2005), p. L570. e-mail: miyayama@rcast. u-tokyo. ac. jp, fax: +81-3-5452-5083.

Google Scholar