Dielectric Properties of β-SiAlON at High Temperature Using Perturbation Method

Abstract:

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-SiAlON with various z-values (z = 0.5~4.0) were produced by hot pressing. The dielectric properties (dielectric constant and tangent loss) of -SiAlON were characterized by the post-resonator method at room temperature and by the perturbation method from room temperature to 1200 oC at 2.45 GHz, respectively. Effect of z-values and temperatures with -SiAlON were investigated.

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Periodical:

Edited by:

Katsutoshi Komeya, Yi-Bing Cheng, Junichi Tatami and Mamoru Mitomo

Pages:

121-123

DOI:

10.4028/www.scientific.net/KEM.403.121

Citation:

Y. H. Seong et al., "Dielectric Properties of β-SiAlON at High Temperature Using Perturbation Method ", Key Engineering Materials, Vol. 403, pp. 121-123, 2009

Online since:

December 2008

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Price:

$35.00

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