Dielectric Properties of β-SiAlON at High Temperature Using Perturbation Method

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-SiAlON with various z-values (z = 0.5~4.0) were produced by hot pressing. The dielectric properties (dielectric constant and tangent loss) of -SiAlON were characterized by the post-resonator method at room temperature and by the perturbation method from room temperature to 1200 oC at 2.45 GHz, respectively. Effect of z-values and temperatures with -SiAlON were investigated.

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121-123

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December 2008

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© 2009 Trans Tech Publications Ltd. All Rights Reserved

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