Dielectric Properties of β-SiAlON at High Temperature Using Perturbation Method
-SiAlON with various z-values (z = 0.5~4.0) were produced by hot pressing. The dielectric properties (dielectric constant and tangent loss) of -SiAlON were characterized by the post-resonator method at room temperature and by the perturbation method from room temperature to 1200 oC at 2.45 GHz, respectively. Effect of z-values and temperatures with -SiAlON were investigated.
Katsutoshi Komeya, Yi-Bing Cheng, Junichi Tatami and Mamoru Mitomo
Y. H. Seong et al., "Dielectric Properties of β-SiAlON at High Temperature Using Perturbation Method ", Key Engineering Materials, Vol. 403, pp. 121-123, 2009