High Temperature Oxidation of SiC Powder in Oxidizing Atmosphere Containing Water Vapor

Abstract:

Oxidation of SiC powder was studied at 1373 K to 1873 K in Ar-O2, Ar-H2O, and Ar-O2-H2O using thermogravimetry. At 1373 K to 1573K, the weight gain increased with increasing water vapor pressure. The oxidation rate was evaluated on the basis of the Ginstering-Brounshtein kinetic model. In this temperature region, the apparent activation energy for the oxidation was almost the same (139-191 kJmol-1) independent of the atmosphere, suggesting that the same oxidation process proceeds. On the other hand, at temperatures >1673 K, the weight gain in the dry O2 (Ar-O2) was greater than that in the wet and wet O2 (Ar-H2O and Ar-O2-H2O). The apparent activation energy in the dry O2 (442 kJmol-1) was much greater than that in the wet and wet O2. We propose that water molecule diffused in silica layer in the wet and wet O2 atmosphere at 1373 K to 1873 K.

• Periodical: Key Engineering Materials (Volume 403)
• Pages: 197-200
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.403.197
• Online since: December 2008
• Authors: T. Akashi, Miho Kasajima, Chiharu Muraoka, Hajime Kiyono
• Keywords: Diffusion Kinetics, Oxidation, Silicon Carbide (SiC), Thermo-Gravimetry (TG), Water Vapor

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