Effect of HfO2 Coating Films on Oxidation Resistance of SiC Ceramics

Miho Kasajima; T. Akashi; Shiro Shimada

doi:10.4028/www.scientific.net/KEM.403.193

Paper Titles

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Microstructural and Mechanical Properties of Ti₃SiC₂ Composites
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Effect of HfO₂ Coating Films on Oxidation Resistance of SiC Ceramics
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High Temperature Oxidation of SiC Powder in Oxidizing Atmosphere Containing Water Vapor
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 403Effect of HfO2 Coating Films on Oxidation...

Effect of HfO₂ Coating Films on Oxidation Resistance of SiC Ceramics

Abstract:

HfO2 coatings were deposited on sintered SiC ceramics by a sol-gel process to improve the oxidation resistance of SiC. Crack-free HfO2 coatings ~200 nm thick were obtained by 8 cycles of dip-coating process using a mixed solution of Hf(OEt)4, DEA, and ethanol. XRD analysis indicated that the monoclinic HfO2 film was formed on the SiC ceramics. The un- and HfO2-coated SiC specimens were oxidized in Ar (purity: 99.9995%) containing a trace of oxygen or H2O at 1600°C for 10 h and the weight change was monitored by thermogravimetry. The weight of the un-coated sample decreased due to the active oxidation, while the weight loss of the HfO2-coated samples was smaller than that of un-coated sample.

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Periodical:

Key Engineering Materials (Volume 403)

Pages:

193-196

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.403.193

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Online since:

December 2008

Authors:

Miho Kasajima, T. Akashi, Shiro Shimada

Keywords:

Active Oxidation Resistance, HfO₂ Coating, Silicon Carbide (SiC), Sol-Gel (SG), Thermo-Gravimetry (TG)

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