Deformation in Mono-Crystalline Silicon Caused by High Speed Single-Point Micro-Cutting

Abstract:

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This paper investigates the deformation in monocrystalline silicon subjected to single-point cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.

Info:

Periodical:

Key Engineering Materials (Volumes 407-408)

Edited by:

Fan Rui, Qiao Lihong, Chen Huawei, Ochi Akio, Usuki Hiroshi and Sekiya Katsuhiko

Pages:

347-350

DOI:

10.4028/www.scientific.net/KEM.407-408.347

Citation:

A.Q. Biddut et al., "Deformation in Mono-Crystalline Silicon Caused by High Speed Single-Point Micro-Cutting", Key Engineering Materials, Vols. 407-408, pp. 347-350, 2009

Online since:

February 2009

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Price:

$35.00

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