Development of Multiscale Simulation System for Nano-Processes

Article Preview

Abstract:

In contrast to microscale method (molecular dynamics) or macroscale method (FEM), multiscale modeling is a new, fast developing and challenging scientific field with contributions from many scientific disciplines in an effort to assure materials simulation across length/time scale. In this paper we propose MPM/MD handshaking method to establish multiscale modeling of thin film formation/nanocutting. First, the detailed handshaking method is presented for large scale simulation along with basic principles of the multiscale approach. Then, quantitative items: flatness, cutting force, adhesion between cluster and substrate, etc. are provided to avoid drawbacks of current qualitative manner. Finally, simulations are carried out to clarify the efficiency of system.

You might also be interested in these eBooks

Info:

Periodical:

Key Engineering Materials (Volumes 407-408)

Pages:

452-455

Citation:

Online since:

February 2009

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2009 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] G. Müller, P.P. Deimal, W. Hellmich, C. Wagner, Sensor fabrication using thin film-on-silicon approaches, Thin Solid Films 296: 157, (1997).

DOI: 10.1016/s0040-6090(96)09338-8

Google Scholar

[2] N. Hwang, J. Hahan, D. Yoon, Charged cluster model in the low pressure synthesis of diamond, J. Crystal Growth 162: 55-68, (1996).

DOI: 10.1016/0022-0248(95)00943-4

Google Scholar

[3] H.W. CHEN, I. HAGIWARA, T. HUANG, D.W. ZHANG, Theoretical Study on Thin-film Formation by Parallel Molecular Dynamics Simulation, Synthetic Metals, 155: 652-656, (2005).

DOI: 10.1016/j.synthmet.2005.08.022

Google Scholar

[4] H. Chen, I. Hagiwara, D. Zhang, T. Huang, Parallel molecular dynamics simulation on thin film formation, Journal of crystal growth, 276: 281-288, (2005).

DOI: 10.1016/j.jcrysgro.2004.11.304

Google Scholar

[5] S. G. Bardenhagen, Energy Conservation Error in the Material Point Method for Solid Mechanics, J. of Comput. Phys., 180: 383-403, (2002).

DOI: 10.1006/jcph.2002.7103

Google Scholar

[6] Daw, M.S., Baskes, M.I., Embedded-atom method: Derivation and application to impurities, surfaces, and other defects in metals. Physical Review Letter 29: 6443-6453, 1984. Fig. 7 The effect of velocity of cluster on epitaxy at 600K Fig. 5 )( pFLT r about primary and secondary clusters deposition.

DOI: 10.1103/physrevb.29.6443

Google Scholar

[10] [20] [30] [40] [50] [60] [70] [80] [90] 100.

Google Scholar

[1] 10 100 1000 3000 Velocity of Cluster (m/s) Flatness (%) 203 primary 203 secondary 563 primary 563 secondary 1563 primary 1563 secondary.

Google Scholar

[1] 10 100 10 00 30 00 Vel ocit y of Clu ster (m/ s) Degre e of E pitaxy (%).

Google Scholar

[2] 03 P ri mar y 20 3 Secon dary.

Google Scholar

[5] 63 P ri mar y 56 3 Secon dary.

Google Scholar

[1] 563 P r imary 15 63 Seco ndary Fig. 6 Adhesion between cluster and substrate at 600K.

Google Scholar

[10] [0] [10] [1] [10] [2] [10] [3] [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] Velocity of cluster Adhesion force (eV/ o A) 203-primary 203 secondary 563-primary 563 secondary 1563-primary 1563 secondary.

Google Scholar