Temperature Field during CMP GaAs Wafer Using an AID

Wen Zhuang Lu; Dun Wen Zuo; Yu Li Sun; Yu Fei Zhao; Feng Xu; Rong Fa Chen

doi:10.4028/www.scientific.net/KEM.416.28

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Temperature Field during CMP GaAs Wafer Using an AID
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 416Temperature Field during CMP GaAs Wafer Using an...

Temperature Field during CMP GaAs Wafer Using an AID

Abstract:

The abrasive ice disc chemical mechanical polishing (AID-CMP) is a potential polishing process in the semiconductor industry to realize superior surface finish and planarity for semiconductor wafers. In this paper we investigated the temperature field during GaAs wafer AID-CMP process for a better understanding of AID-CMP. The results show that the AID outer temperature is higher than the inner, and the highest temperature in AID is at the wafer/AID contact zone. The increases of Pc, v, eh and tp will generate more energy and cause more local melting during GaAs wafer AID-CMP process. The AID temperature and the area of highest temperature zone increase with increasing Pc, v, and eh. The nodes temperature increase in every conditions adopted as tp increases. The area of melted zone and thickness of melted ice increase with increasing Pc, v, eh and tp.

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Periodical:

Key Engineering Materials (Volume 416)

Pages:

28-33

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.416.28

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Online since:

September 2009

Authors:

Wen Zhuang Lu, Dun Wen Zuo, Yu Li Sun, Yu Fei Zhao, Feng Xu, Rong Fa Chen

Keywords:

AID, CMP, GaAs Wafer, Temperature Field

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