Dielectric Properties of Bi_0.2K_0.8(Zn_0.1Ti_0.1)Ta_0.8O₃ Ceramics

Abstract:

The Bi0.2K0.8(Zn0.1Ti0.1)Ta0.8O3 and Li doped ceramics prepared via the solid-state reaction technique were investigated. The XRD patterns show the single phase cubic perovskite structure without any evidence of secondary phases when sintered at 1250 oC for undoped Bi0.2K0.8(Zn0.1Ti0.1)Ta0.8O3 and sintered at 1100 oC for Li doped one. The dielectric properties indicate the diffused phase transition (DPT). The dielectric loss of undoped ceramic increases with increasing frequency in temperature range 270 oC down to -150 oC, which suggests low temperature relaxation, while the dielectric loss of Li doped ceramic reveals the interesting lower value over a wide temperature range of about 0 - 300 oC.

• Periodical: Key Engineering Materials (Volumes 421-422)
• Pages: 255-258
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.421-422.255
• Online since: December 2009
• Authors: Piyachon Ketsuwan, Anurak Prasatkhetragarn, Supon Ananta, Chien Chih Huang, David P. Cann, Rattikorn Yimnirun
• Keywords: Bi(Zn_1/2Ti_1/2)O₃, Dielectric Property, KTaO₃

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