E–J Characteristics in Multilayer Ceramic Capacitors with the Thin Dielectric Layers

Makito Nakano; Akira Saito; Nobuyuki Wada

doi:10.4028/www.scientific.net/KEM.421-422.277

Paper Titles

Effect of Compressive Stress on Ferroelectric Aging Behavior of Hybrid-Doped Fe³⁺/Nb⁵⁺ BaTiO₃ Ceramics
p.259

Pinched Hysteresis Scaling in Hybrid-Doped BaTiO₃
p.263

Synthesis of Nano-Sized Barium Titanate Powder by Rotary-Hydrothermal Process
p.269

Wide Range Dielectric Spectroscopy of Barium Strontium Titanate Ceramics
p.273

E–J Characteristics in Multilayer Ceramic Capacitors with the Thin Dielectric Layers
p.277

Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields
p.281

The Effects of Sintering Temperature Variations on some Physical Properties of Al₂O₃-SiO₂-PbO-MgO Laminated Tape System
p.285

Sintering Behavior of Silver Particles in Electrode for Multilayer Ceramic Substrate
p.289

The Influence of BaTiO₃ Tetragonality by Solid State Synthesis on MLCC’s Dielectric Characteristics
p.293

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E–J Characteristics in Multilayer Ceramic Capacitors with the Thin Dielectric Layers

Abstract:

The factors causing a decrease in the resistivity of multilayer ceramic capacitors (MLCCs) with a decrease in the thickness of dielectric layers were examined by carrying out measurements and finite element method (FEM) simulations. The obtained electric field vs. current density plots (E–J characteristics) indicated that the local concentration of electric field increased with the decrease in the thickness of the dielectric layers. The investigation of the local concentration of electric field at the grain boundaries using an FEM showed that the decrease in resistivity was caused by the roughness of the interface between dielectric layers and inner electrodes and the presence of large grains in the dielectric layers.