Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields

Abstract:

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The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films.

Info:

Periodical:

Key Engineering Materials (Volumes 421-422)

Edited by:

Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki

Pages:

281-284

DOI:

10.4028/www.scientific.net/KEM.421-422.281

Citation:

K. Morito et al., "Behavior of Hydrogen Atoms in Perovskite-Type Oxide Thin Films under Electric Fields", Key Engineering Materials, Vols. 421-422, pp. 281-284, 2010

Online since:

December 2009

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Price:

$35.00

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