Self-Similarity of Electrochemically-Deposited Copper Films on Porous Silicon

Abstract:

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The microstructures of electrochemically-deposited copper control electrode on semiconducting porous silicon films were investigated with scanning electron microscopy. Our results showed that smooth control electrode could be grown in areas far from the edge of porous silicon film while irregular electrode was formed on the circular edge of porous silicon films. The self-similarity of the electrochemically-deposited copper control electrode was analyzed in details.

Info:

Periodical:

Key Engineering Materials (Volumes 428-429)

Edited by:

Yuan Ming Huang

Pages:

515-518

DOI:

10.4028/www.scientific.net/KEM.428-429.515

Citation:

L. L. Chen et al., "Self-Similarity of Electrochemically-Deposited Copper Films on Porous Silicon", Key Engineering Materials, Vols. 428-429, pp. 515-518, 2010

Online since:

January 2010

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Price:

$35.00

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