Self-Similarity of Electrochemically-Deposited Copper Films on Porous Silicon

Abstract:

The microstructures of electrochemically-deposited copper control electrode on semiconducting porous silicon films were investigated with scanning electron microscopy. Our results showed that smooth control electrode could be grown in areas far from the edge of porous silicon film while irregular electrode was formed on the circular edge of porous silicon films. The self-similarity of the electrochemically-deposited copper control electrode was analyzed in details.

• Periodical: Key Engineering Materials (Volumes 428-429)
• Pages: 515-518
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.428-429.515
• Online since: January 2010
• Authors: Lan Li Chen, Bao Gai Zhai, Yuan Ming Huang
• Keywords: Electrochemical Deposition, Porous Silicon (PS), Self-Similarity, Simulation

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