Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass

X. Yang; C. Wang; C. Zhao; W. Tang; X. Gao; J. Yang; B. Liu; X. Qi; G. Du; J. Cao

doi:10.4028/www.scientific.net/KEM.428-429.501

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 428-429Fabrication of ZnO Thin Film Transistors Based on...

Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass

Abstract:

In our paper, we induced the process of ZnO based thin film transistors (ZnO-TFTs) fabricated on the substrate of glass. The photolithographic plate designed for using in the ZnO-TFT devices fabrication process was shown in our paper. The ZnO-TFT devices were fabricated successfully, the Ion/off ratio is ~104.

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Key Engineering Materials (Volumes 428-429)

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501-504

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.428-429.501

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Online since:

January 2010

Authors:

X. Yang, C. Wang, C. Zhao, W. Tang, X. Gao, J. Yang, B. Liu, X. Qi, G. Du, J. Cao

Keywords:

Fabrication, Photolithography, Thin Film Transistor, Zinc Oxide (ZnO)

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