Low-Temperature Firing and Microwave Dielectric Properties of Zn3Nb2O8 Ceramics with CuO-V2O5-Bi2O3
The influence of CuO-V2O5-Bi2O3 addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of Zn3Nb2O8 ceramics were investigated. The co- doping of CuO, V2O5 and Bi2O3 can significantly lower the sintering temperature of Zn3Nb2O8 ceramics from 1150°C to 900°C. The Zn3Nb2O8-0.5wt% CuO-0.5wt% V2O5-2.0wt% Bi2O3 ceramic sintered at 900°C showed a relative density of 97.1%, a dielectric constant (εr) of 18.2, and a quality factor (Q×f) of 36781 GHz. The dielectric properties in this system exhibited a significant dependence on the relative density, content of additives and sintering temperature. The relative density and dielectric constant (εr) of Zn3Nb2O8 ceramics increased with increasing CuO-V2O5-Bi2O3 additions. And also the relative density and dielectric constant of Zn3Nb2O8 ceramics increased by the augment of the sintering temperature.
Wei Pan and Jianghong Gong
X. P. Lin et al., "Low-Temperature Firing and Microwave Dielectric Properties of Zn3Nb2O8 Ceramics with CuO-V2O5-Bi2O3 ", Key Engineering Materials, Vols. 434-435, pp. 224-227, 2010