Microstructure and Leakage Current Characteristics of ZrTiO4 Thin Films by Sol-Gel Method

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This paper describes microstructure and leakage current characteristics of ZrTiO4 thin films on ITO/Glass substrate were deposited by sol-gel method with a fix per-heating temperature of 250oC for 30min at various annealing temperatures from 600oC to 800oC for 1 hr. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by atomic force microscopy. The dependence of the microstructure and leakage current characteristics on annealing temperature was also investigated.

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Key Engineering Materials (Volumes 434-435)

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228-230

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March 2010

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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