Microstructure and Leakage Current Characteristics of ZrTiO4 Thin Films by Sol-Gel Method

Abstract:

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This paper describes microstructure and leakage current characteristics of ZrTiO4 thin films on ITO/Glass substrate were deposited by sol-gel method with a fix per-heating temperature of 250oC for 30min at various annealing temperatures from 600oC to 800oC for 1 hr. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by atomic force microscopy. The dependence of the microstructure and leakage current characteristics on annealing temperature was also investigated.

Info:

Periodical:

Key Engineering Materials (Volumes 434-435)

Edited by:

Wei Pan and Jianghong Gong

Pages:

228-230

DOI:

10.4028/www.scientific.net/KEM.434-435.228

Citation:

C. H. Hsu et al., "Microstructure and Leakage Current Characteristics of ZrTiO4 Thin Films by Sol-Gel Method", Key Engineering Materials, Vols. 434-435, pp. 228-230, 2010

Online since:

March 2010

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Price:

$35.00

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