Relationship between Aluminum and Lithium and Annealing for Reducing Lithium Contamination in Aluminum-Implanted Zinc Oxide

Abstract:

The relationship between Al and Li during diffusion was studied using Al-implanted ZnO. The Al donor in ZnO acts to increase the concentration of Li contamination from the atmosphere during the annealing. It is difficult to decompose the relationship formed by diffusion between Al and Li during high-temperature annealing. The most effective method to decompose the relationship is to anneal the as-implanted ZnO at a pressure of 5×10-3 torr. This annealing increases the Al solubility limit because the ZnO surface evaporates.

• Periodical: Key Engineering Materials (Volume 445)
• Pages: 205-208
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.445.205
• Online since: July 2010
• Authors: Isao Sakaguchi, Kenji Matsumoto, Takeshi Ohgaki, Shunichi Hishita, Yutaka Adachi, Tsubasa Nakagawa, Ken Watanabe, Naoki Ohashi, Hajime Haneda
• Keywords: Defect, Ion Implantation, Secondary Ion Mass Spectroscopy (SIMS)

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