Investigation of Plasticity in Silicon Nanowires by Molecular Dynamics Simulations

J. Guénolé; Julien Godet; Sandrine Brochard

doi:10.4028/www.scientific.net/KEM.465.89

Paper Titles

First Principles Study of Ideal Composites Reinforced by Coherent Nano-Fibres
p.73

Influence of Dislocations on the Spatial Variation of Microstructure in Martensites
p.77

Stabilizing Effect of (100) Compound Twinning in NiTi Martensite
p.81

Elastic Parameters of Various Rafted Structures of Model Ni-Base Alloys
p.85

Investigation of Plasticity in Silicon Nanowires by Molecular Dynamics Simulations
p.89

Microstructure, Fracture and Damage Mechanisms in Rare-Earth Doped Silicon Nitride Ceramics
p.93

Peierls Stresses Estimated from CRSS Vs. Temperature Curve and their Relation to the Crystal Structure
p.97

Stress Relaxation in an AZ31 Magnesium Alloy
p.101

Elastic-Plastic Stress Singularities of Plane V-Notches in Power-Hardening Materials
p.105

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Investigation of Plasticity in Silicon Nanowires by Molecular Dynamics Simulations

Abstract:

We have performed molecular dynamics simulations on silicon nanowires (Si-NW) with [001] axis and square section. The forces are modeled by well-tested semi-empirical potentials. First we investigated the edge reconstruction of Si nanowires. Then, we studied the behavior of the NW when submitted to compression stresses along its axis. At low temperature (300K), we observed the formation of dislocation loops with a Burgers vector 1/2 [10-1]. These dislocations slip in the unexpected {101} planes having the largest Schmid factor.