Influence of Ar+ Energy of Bombardment Cu Target and Low Energy Assisted Bombardment on Cu-W Thin Film Structure by Ion Beam Sputtering

Abstract:

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This paper is to study the influence of Ar+ energy of bombardment Cu target and low energy assisted bombardment on Cu-W film structure in the preparation of Cu-W thin film by dual ion beam sputtering technique with iron as the substrate and argon as ion source. The results shown : when Ar+ energy of bombardment tungsten target is about 3keV, the beam of copper target is 20mA, Ar+ energy of bombardment Cu target is 1kev, 1.5kev and 2keV respectively, Cu-W thin film prepared by ion beam sputtering exists with the skeleton of tungsten in amorphous phase mixing with copper grains; with the increase of Ar+ energy of of bombardment copper target, the grain size of copper increases slightly; influenced by crystal defects and lattice distortion, copper diffraction peak offsets a little. Low energy assisted bombardment helps to increase grain growth of copper and can decrease crystal defects and lattice distortion. But with excessive energy, thin film fails to deposit.

Info:

Periodical:

Key Engineering Materials (Volumes 474-476)

Edited by:

Garry Zhu

Pages:

448-453

DOI:

10.4028/www.scientific.net/KEM.474-476.448

Citation:

Y. P. Ai et al., "Influence of Ar+ Energy of Bombardment Cu Target and Low Energy Assisted Bombardment on Cu-W Thin Film Structure by Ion Beam Sputtering", Key Engineering Materials, Vols. 474-476, pp. 448-453, 2011

Online since:

April 2011

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$35.00

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