Influence of Ar+ Energy of Bombardment Cu Target and Low Energy Assisted Bombardment on Cu-W Thin Film Structure by Ion Beam Sputtering

Abstract:

This paper is to study the influence of Ar+ energy of bombardment Cu target and low energy assisted bombardment on Cu-W film structure in the preparation of Cu-W thin film by dual ion beam sputtering technique with iron as the substrate and argon as ion source. The results shown : when Ar+ energy of bombardment tungsten target is about 3keV, the beam of copper target is 20mA, Ar+ energy of bombardment Cu target is 1kev, 1.5kev and 2keV respectively, Cu-W thin film prepared by ion beam sputtering exists with the skeleton of tungsten in amorphous phase mixing with copper grains; with the increase of Ar+ energy of of bombardment copper target, the grain size of copper increases slightly; influenced by crystal defects and lattice distortion, copper diffraction peak offsets a little. Low energy assisted bombardment helps to increase grain growth of copper and can decrease crystal defects and lattice distortion. But with excessive energy, thin film fails to deposit.

• Periodical: Key Engineering Materials (Volumes 474-476)
• Pages: 448-453
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.474-476.448
• Online since: April 2011
• Authors: Yong Ping Ai, Ying Ying Zeng, Li Jun Liu, Xiao Ming Huang, Tai Ping Zhou
• Keywords: Amorphous Phase, Cu-W Alloy, Dual Ion Beam Sputtering, Thin Film

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