Influence of Ar+ Energy of Bombardment Cu Target and Low Energy Assisted Bombardment on Cu-W Thin Film Structure by Ion Beam Sputtering
This paper is to study the influence of Ar+ energy of bombardment Cu target and low energy assisted bombardment on Cu-W film structure in the preparation of Cu-W thin film by dual ion beam sputtering technique with iron as the substrate and argon as ion source. The results shown : when Ar+ energy of bombardment tungsten target is about 3keV, the beam of copper target is 20mA, Ar+ energy of bombardment Cu target is 1kev, 1.5kev and 2keV respectively, Cu-W thin film prepared by ion beam sputtering exists with the skeleton of tungsten in amorphous phase mixing with copper grains; with the increase of Ar+ energy of of bombardment copper target, the grain size of copper increases slightly; influenced by crystal defects and lattice distortion, copper diffraction peak offsets a little. Low energy assisted bombardment helps to increase grain growth of copper and can decrease crystal defects and lattice distortion. But with excessive energy, thin film fails to deposit.
Y. P. Ai et al., "Influence of Ar+ Energy of Bombardment Cu Target and Low Energy Assisted Bombardment on Cu-W Thin Film Structure by Ion Beam Sputtering", Key Engineering Materials, Vols. 474-476, pp. 448-453, 2011