The Mean Projected Range and Range Straggling of Nd Ions Implanted in Silicon Carbide

Xi Feng Qin; Shuang Li; Feng Xiang Wang; Yi Liang

doi:10.4028/www.scientific.net/KEM.474-476.565

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 474-476The Mean Projected Range and Range Straggling of...

The Mean Projected Range and Range Straggling of Nd Ions Implanted in Silicon Carbide

Abstract:

In view of the influence of the projected range, the range straggling, and the lateral deviation of ions in materials on the property of device in the fabrication of photoelectric integration devices by ion implantation, the mean projected ranges and range straggling for energetic 200 – 500 keV Nd ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2006) calculations. It has been found that the measured values of the mean projected range R_p are good agreement with the SRIM calculated values; for the range straggling △R_p, the difference between the experiment data and the calculated results is much higher than that of R_p

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Key Engineering Materials (Volumes 474-476)

Pages:

565-569

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.474-476.565

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Online since:

April 2011

Authors:

Xi Feng Qin, Shuang Li, Feng Xiang Wang, Yi Liang

Keywords:

Ion Implantation, Projected Range, Range Straggling, Rutherford Backscattering Technique, Silicon Carbide (SiC)

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References

[1] T. Kimura, A. Yokoi, H. Horiguchi, R. Saito, T. Ikoma, and A. Sato: Appl. Phys. Lett. Vol. 46 (1994), p.983.

Google Scholar

[2] H. Ennen, G. Pomrenke, A. Axmann: Appl. Phys. Lett. Vol. 46(4) (1985), p.381.

Google Scholar

[3] F. Duteil, C.X. Du, K.B. Joelsson, P. Persson, L. Hultman, G. Pozina, W. X. Ni, G. V. Hansson: Mat. Sci. Semicon. Proc. Vol. 3 (2000), p.523.

Google Scholar

[4] M. Markmann, E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter: Appl. Phys. Lett. Vol. 78 (2001), p.210.

Google Scholar

[5] T. Nakanose, T. Kimura, H. Isshiki, S. Yugo, R. Saito: Nucl. Instr. and Meth. B 161-163 (2000), p.1080.

Google Scholar

[6] H. Ennen, J. Schneider, G. Pomrenke, A. Axmann: Appl. Phys. Lett. Vol. 43(10) (1983), p.943.

Google Scholar

[7] R.M. Macfarlane, F. Tong, A.J. Silversmith and W. Lenth: Appl. Phys. Lett. Vol. 52 (1988), p.1130.

Google Scholar

[8] W. Lenth and R.M. Macfarlane: J. Lumin. Vol. 45 (1990), p.346.

Google Scholar

[9] H. Matsunami: Jpn. J. Appl. Phys. Part 1 Vol. 43 (2004), p.6835.

Google Scholar

[10] Information on http: /www. srim. org.

Google Scholar

[11] W.K. Chu, J.W. Mayer, M.A. Nicolet: Backscattering Spectrometry (Academic press, New York 1978).

Google Scholar