The Mean Projected Range and Range Straggling of Nd Ions Implanted in Silicon Carbide

Abstract:

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In view of the influence of the projected range, the range straggling, and the lateral deviation of ions in materials on the property of device in the fabrication of photoelectric integration devices by ion implantation, the mean projected ranges and range straggling for energetic 200 – 500 keV Nd ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2006) calculations. It has been found that the measured values of the mean projected range Rp are good agreement with the SRIM calculated values; for the range straggling △Rp, the difference between the experiment data and the calculated results is much higher than that of Rp

Info:

Periodical:

Key Engineering Materials (Volumes 474-476)

Edited by:

Garry Zhu

Pages:

565-569

DOI:

10.4028/www.scientific.net/KEM.474-476.565

Citation:

X. F. Qin et al., "The Mean Projected Range and Range Straggling of Nd Ions Implanted in Silicon Carbide", Key Engineering Materials, Vols. 474-476, pp. 565-569, 2011

Online since:

April 2011

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$35.00

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