Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells

Wen Teng Chang; Yu Ting Chen; Chung Chin Kuo

doi:10.4028/www.scientific.net/KEM.480-481.629

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 480-481Blue Shifting of Hydrogenated Silicon Carbide...

Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells

Abstract:

Five-period hydrogenated silicon carbide (SiC) multiple quantum wells with silicon dioxide (SiO2) or silicon nitride (SiN) dielectric that were synthesized by high density plasma chemical vapor deposition were studied using photoluminescence (PL) spectroscopy to understand its blue shift. Rapid thermal annealing induced significant blue shifting in the PL spectra after fluorine ion implantation due to crystallization. The thinning of the SiC causes blue shift due to the quantum confinement effect. The higher PL intensity of the amorphous SiC:H in SiO2 than in SiC/SiN may be attributed to the high number of non-radiative sites on its surface. Annealing with nitrogen may cause impurities in SiC/SiO2, thereby broadening the PL peak.

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Key Engineering Materials (Volumes 480-481)

Pages:

629-633

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.480-481.629

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Online since:

June 2011

Authors:

Wen Teng Chang, Yu Ting Chen, Chung Chin Kuo

Keywords:

Blue Shift, Fluorine Ion Implantation, Nitrogen Doping, Photoluminescence (PL), Silicon Carbide (SiC)

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References

[1] A.M. Rossi, T.E. Murphy and V. Reipa: Appl. Phys. Lett. Vol. 92 (2008), p.253112.

Google Scholar

[2] V.P. Parkhutik, F. Namavar and E. Andrade: Thin Solid Films Vol. 297 (1997), p.229.

DOI: 10.1016/s0040-6090(96)09422-9

Google Scholar

[3] K.H. Lee, S.K. Lee and K.S. Jeon: Appl. Surf. Sci. Vol. 255 (2009), p.4414.

Google Scholar

[4] X. Luo, W. Ma, Y. Zhou, D. Liu, B. Yang and Y. Dai: Nano. Res. Lett. Vol. 5 (2010), p.252.

Google Scholar

[5] J. Botsoa, J.M. Bluet, V. Lysenko, O. Marty, D. Barbier and G. Guillot: J. Appl. Phys. Vol. 102 (2007), p.083526.

DOI: 10.1063/1.2798531

Google Scholar

[6] L. Kamyab, Rusli, M.B. Yu, L. He and M. Dua: ECS Trans. Vol. 25. (2009), p.727.

Google Scholar

[7] Y. Tawada, J. Takada, N. Fukada, M. Yamaguchi, H. Yamagishi, K. Nishimura, M. Kondo, Y. Hosokawa, K. Tsuge, T. Nakayama and I. Hatano: Appl. Phys. Lett. Vol. 48 (1986), p.584.

DOI: 10.1063/1.96474

Google Scholar

[8] S. Miyajima A. Yamada and M. Konagai: Thin Solid Films Vol. 430 (2003), p.274.

Google Scholar

[9] J. Chen, W. Qian, Y. Ye and Q. Chen: J. Phys. D: Appl. Phys. Vol. 39 (2006), p.1472.

Google Scholar

[10] M. Ohta, T. Miyamoto, S. Makino, T. Matsuura, Y. Matsui and F. Koyama: Int. Conf. Indium Phosphide Rel. Mat. May (2003).

Google Scholar

[11] L.G. Jacobsohn, I.V. Afanasyev-Charkin, D.W. Cooke, R.K. Schulze, R.D. Averitt and M. Nastasi: J. Vac. Sci. Technol. A Vol. 22 (2004), p.1223.

Google Scholar

[12] M. Schafer, W. Hoyer, M. Kira, S.W. Koch and J.V. Moloney: J. Opt. Soc. Am. B, Vol. 25 (2008), p.187.

Google Scholar