Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells

Abstract:

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Five-period hydrogenated silicon carbide (SiC) multiple quantum wells with silicon dioxide (SiO2) or silicon nitride (SiN) dielectric that were synthesized by high density plasma chemical vapor deposition were studied using photoluminescence (PL) spectroscopy to understand its blue shift. Rapid thermal annealing induced significant blue shifting in the PL spectra after fluorine ion implantation due to crystallization. The thinning of the SiC causes blue shift due to the quantum confinement effect. The higher PL intensity of the amorphous SiC:H in SiO2 than in SiC/SiN may be attributed to the high number of non-radiative sites on its surface. Annealing with nitrogen may cause impurities in SiC/SiO2, thereby broadening the PL peak.

Info:

Periodical:

Key Engineering Materials (Volumes 480-481)

Edited by:

Yanwen Wu

Pages:

629-633

DOI:

10.4028/www.scientific.net/KEM.480-481.629

Citation:

W. T. Chang et al., "Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells", Key Engineering Materials, Vols. 480-481, pp. 629-633, 2011

Online since:

June 2011

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Price:

$35.00

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