Structure Design, Fabrication and Characteristics of Polysilicon Nano-Thin Films Resistances Pressure Sensor Based on MEMS Technology

Abstract:

A polysilicon nano-thin films pressure sensor was designed and fabricated on single crystal silicon substrate by MEMS technology in this paper, and the sensor is composed by Wheatstone bridge structure with four polysilicon nano-thin films resistances fabricated on squared silicon membrane. The experiment result shows that, under constant current power supply of 0.875mA , full scale output is 24.05 mV at room temperature, sensitivity is 0.15 mV/kPa, when the temperatures are from -20 to 80°C, the coefficient of zero temperature and sensitivity temperature is –960 ppm/°C and –820 ppm /°C respectively.

• Periodical: Key Engineering Materials (Volume 483)
• Pages: 200-205
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.483.200
• Online since: June 2011
• Authors: Xiao Feng Zhao, Dian Zhong Wen, Yang Li, Yuan Xin Hou, Chun Peng Ai, Zhi Qiang Wang, De Jun Xiu
• Keywords: Micro-Electromechanical System (MEMS), Polysilicon Nano Thin Films, Pressure Sensor, Wheatstone Bridge

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