Structure Design, Fabrication and Characteristics of Polysilicon Nano-Thin Films Resistances Pressure Sensor Based on MEMS Technology
A polysilicon nano-thin films pressure sensor was designed and fabricated on single crystal silicon substrate by MEMS technology in this paper, and the sensor is composed by Wheatstone bridge structure with four polysilicon nano-thin films resistances fabricated on squared silicon membrane. The experiment result shows that, under constant current power supply of 0.875mA , full scale output is 24.05 mV at room temperature, sensitivity is 0.15 mV/kPa, when the temperatures are from -20 to 80°C, the coefficient of zero temperature and sensitivity temperature is –960 ppm/°C and –820 ppm /°C respectively.
X. F. Zhao et al., "Structure Design, Fabrication and Characteristics of Polysilicon Nano-Thin Films Resistances Pressure Sensor Based on MEMS Technology", Key Engineering Materials, Vol. 483, pp. 200-205, 2011