Effects of Phosphorus-Doping on the Microstructures, Optical and Electric Properties in N-Type Si:H Thin Films

Jian Ning Ding; Feng Ye; Shu Bo Wang; Ning Yi Yuan

doi:10.4028/www.scientific.net/KEM.483.711

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Effects of Phosphorus-Doping on the Microstructures, Optical and Electric Properties in N-Type Si:H Thin Films
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 483Effects of Phosphorus-Doping on the...

Effects of Phosphorus-Doping on the Microstructures, Optical and Electric Properties in N-Type Si:H Thin Films

Abstract:

In this paper we present a system study of phosphorus-doped hydrogenated silicon (Si:H) films prepared on glass by plasma enhanced chemical vapor deposition (PECVD) technique with radio frequency (RF) (13.56 MHz) and DC bias stimulation. The films were characterized using Raman spectroscopy, X-ray diffraction (XRD), optical transmittance and square resistance measurement.

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Periodical:

Key Engineering Materials (Volume 483)

Pages:

711-715

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.483.711

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Online since:

June 2011

Authors:

Jian Ning Ding, Feng Ye, Shu Bo Wang, Ning Yi Yuan

Keywords:

Electric Property, Microstructure, Optical Property, Phosphine Concentration, Si:H Thin Film

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References

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