Effects of Phosphorus-Doping on the Microstructures, Optical and Electric Properties in N-Type Si:H Thin Films

Abstract:

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In this paper we present a system study of phosphorus-doped hydrogenated silicon (Si:H) films prepared on glass by plasma enhanced chemical vapor deposition (PECVD) technique with radio frequency (RF) (13.56 MHz) and DC bias stimulation. The films were characterized using Raman spectroscopy, X-ray diffraction (XRD), optical transmittance and square resistance measurement.

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Periodical:

Edited by:

Xiaohao Wang

Pages:

711-715

DOI:

10.4028/www.scientific.net/KEM.483.711

Citation:

J. N. Ding et al., "Effects of Phosphorus-Doping on the Microstructures, Optical and Electric Properties in N-Type Si:H Thin Films", Key Engineering Materials, Vol. 483, pp. 711-715, 2011

Online since:

June 2011

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