Threshold Voltage and Sub-Threshold Slope Variation with Gate-Length in Al2O3/InAlAs/InGaAs Quantum Well (QW) FET's

I. Tsopelas; A. Gili; J.P. Xanthakis

doi:10.4028/www.scientific.net/KEM.495.112

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Threshold Voltage and Sub-Threshold Slope Variation with Gate-Length in Al₂O₃/InAlAs/InGaAs Quantum Well (QW) FET's

Abstract:

We have theoretically examined the scaling of the Al₂O₃/InAlAs/InGaAs QW FET one of the proposed III-V channel MOSFET's designed to replace the conventional SiO₂/Si structures. To accomplish this we have used a Schroedinger – Poisson – Continuity equation model that is fully 2-dimentional ie all equations are solved along and perpendicular to the channel. We have found out that for the threshold voltage V_T to be around zero volts a Schottky barrier Φ_Β of 3.5 - 4.0eV is necessary. Both Cu or W will suffice. for this. The V_T value moves by 0.7 as the device is scaled from 65 nm gate length L_g to 25nm. Furthermore, as the L_g is scaled to the desired 20nm value the subthreshold slope SS increases from 90meV/dec to about 170meV/dec guaranteeing fast switching.