Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals

Abstract:

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MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradiation with doses in the range 0-100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ~ 2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field.

Info:

Periodical:

Edited by:

E. Hristoforou and D.S. Vlachos

Pages:

120-123

DOI:

10.4028/www.scientific.net/KEM.495.120

Citation:

N. Nedev et al., "Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals", Key Engineering Materials, Vol. 495, pp. 120-123, 2012

Online since:

November 2011

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Price:

$35.00

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