Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals

Nicola Nedev; Emil Manolov; Diana Nesheva; Kiril Krezhov; Roumen Nedev; Mario Curiel; Benjamin Valdez; Alexander Mladenov; Zelma Levi

doi:10.4028/www.scientific.net/KEM.495.120

Paper Titles

Experimental Evidence of a Neutron Flux Generation in a Plasma Discharge Electrolytic Cell
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Growth, Structural and Mechanical Characterization and Reliability of Chemical Vapor Deposited Co and Co₃O₄ Thin Films as Candidate Materials for Sensing Applications
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Threshold Voltage and Sub-Threshold Slope Variation with Gate-Length in Al₂O₃/InAlAs/InGaAs Quantum Well (QW) FET's
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Development of an Electrochemical Maltose Biosensor
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Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals
p.120

Water Plasma Modes and Nuclear Transmutations on the Metallic Cathode of a Plasma Discharge Electrolytic Cell
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SHM System Based on ANN for Aeronautical Applications
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Qualitative and Quantitative Architecture Characterisation of Porous Materials
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TiO₂ Coating onto Fe Powders via Fluidized Bed CVD
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 495Radiation Dosimeter Based on...

Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals

Abstract:

MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradiation with doses in the range 0-100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ~ 2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field.

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Periodical:

Key Engineering Materials (Volume 495)

Pages:

120-123

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.495.120

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Online since:

November 2011

Authors:

Nicola Nedev, Emil Manolov, Diana Nesheva, Kiril Krezhov, Roumen Nedev, Mario Curiel, Benjamin Valdez, Alexander Mladenov, Zelma Levi

Keywords:

Metal-Oxide-Semiconductor Structures, MOS Dosimeter, Nanocrystal, γ-Radiation

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