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Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase Change Memory

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Abstract:

In this work, we investigate the effect of the N-doping on microstructure and electrical properties of chalcogenide Ge2Sb2Te5 (GST) films for application to multilevel-storage phase change memory (PCM). Crystal size can be markedly reduced from 16 nm to 5 nm by N-doping into GST. The crystal growth suppression is believed to be controlled by distributed fine nitride particles. The resistivity of N-GST as a function of annealing temperature exhibits a gradual change due to the crystal growth suppression. The characteristics imply that N-GST is suitable for application to multilevel-storage PCM as the next-generation nonvolatile memory.

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Periodical:

Key Engineering Materials (Volume 497)

Pages:

101-105

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.497.101

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Online since:

December 2011

Authors:

You Yin, Sumio Hosaka

Keywords:

Chalcogenide, Crystal Growth, Multilevel Storage, N-Doping, Phase Change Memory

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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