Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

Hui Zhang; Takuro Tamura; You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.497.127

Paper Titles

Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories
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Random-Access Multilevel Storage in Phase Change Memory by Staircase-Like Pulse Programming
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Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Treatment
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Formation of 12-nm Nanodot Pattern by Block Copolymer Self-Assembly Technique
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Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation
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Tunable Fiber Laser with Scanner Mirror
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Optically Controlled Light Propagation in Dye-Doped Nematic Liquid Crystals with Homogeneous Alignment
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Fabrication of Polymer Optical Waveguides for the 1.5-μm Band Using Focused Proton Beam
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Phantom Experiments on Shear Wave Velocity Measurement by Virtual Sensing Array Spectrum Estimation
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Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

Abstract:

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.