The Structural and Electrical Properties of Ta₂O₅ Thin Films Prepared by DC Sputtering Method

Abstract:

Recently both, electrical and material properties of tantalum oxide (Ta₂O₅) have been found to be useful for microelectronics and optoelectronics devices. The need of higher permittivity of dielectric material attracts more attention towards the tantalum oxide thin films. To ensure good electrical performance of the resulting device DC sputtering technique has been used for depositing Ta₂O₅ films. In the present work, the potential of Ta₂O₅ thin films as a high K dielectric for CMOS devices has been studied. Physical characteristics of the Ta₂O₅ dielectrics were investigated with x-ray diffraction and electrical properties were measured by capacitance-voltage (C-V) analysis. The interface state density of 1* 10 ¹¹ cm^-2 eV^-1 have been achieved for 50 nm Ta₂O₅ film. The calculated value of dielectric constant of as deposited Ta₂O₅ oxide film was found to be 29. This Ta₂O₅ dielectric shows promise for future generation of CMOS devices.

• Periodical: Key Engineering Materials (Volume 500)
• Pages: 317-321
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.500.317
• Online since: January 2012
• Authors: Kanta Rathee, Mukesh Kumar, B.P. Malik
• Keywords: C-V Analysis, DC Sputtering, Tantalum Oxide

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