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Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium

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Abstract:

Czochralski Growth of Si Crystals Heavily Doped with in Impurity and Co-Doped with Electrically Neutral Impurity C or Ge Was Conducted in Order to Investigate the Solubility and Ionization Ratio of in in Si for Utilizing in Advanced ULSI and PV Devices. The Carrier Concentrations in the Grown in-Doped and (In+C) and (In+Ge) Co-Doped Crystals Were in a Range of 3.5~6.5 × 1016 Cm-3, much Lower than the Total Concentration of in Impurity due to the Low Ionization Ratio. Sufficient Increase of Carrier Concentrations by Co-Doping of C or Ge Impurity Was Not Detected for their Low Concentrations in the Grown Crystals Investigated.

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Periodical:

Key Engineering Materials (Volume 508)

Pages:

220-223

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.508.220

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Online since:

March 2012

Authors:

Kaihei Inoue, Yuki Tokumoto, Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga

Keywords:

Carrier Concentration, Czochralski Silicon Crystal Growth, Impurity Co-Doping, Indium Dopant, Neutral Impurity

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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