Comprehensive Approach for the Construction of New Material for Electronic Multipliers

E.S. Vikulova; K.V. Zherikova; L.N. Zelenina; T.P. Chusova; S.V. Sysoev; V. Shevtsov; A.P. Zubareva; N.B. Morozova; I.K. Igumenov

doi:10.4028/www.scientific.net/KEM.508.215

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Effect of Sb₂O₃ Doping Ratio on Electrical and Optical Properties of ATO Films by Pulsed Laser Deposition
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 508Comprehensive Approach for the Construction of New...

Comprehensive Approach for the Construction of New Material for Electronic Multipliers

Abstract:

Volatile Complexes Mg(thd)₂(TMEDA) (1) and Cs[Y(ptac)₄] (2) (Hthd = 2,2,6,6-Tetramethylheptane-3,5-Dione, TMEDA = N,N,N’,N’-Tetramethylethylenediamine, Hptac = 1,1,1- Trifluoro-5,5-Dimethylhexane-2,4-Dione) Were Synthesized and Characterized. Thermal Properties of (1) and (2) Were Investigated by TG. The Temperature Dependencies of Saturated Vapour Pressure of Compounds Were Measured by Static (for (1)) or Flow (for (2)) Method. The Obtained Data Were Used for Choosing Temperature Parameters of Deposition Mg- and Cs-Containing Films by CVD Using (1) and (2) as Volatile Precursors. MgO Thin Films Were Deposited on Si (100) by Low-Pressure CVD (LPCVD) and Pulse-CVD in Temperature Deposition Range 673-823K. Cs- and Mg,Cs-Containig Films Were Formed by LPCVD. The Deposited Films Were Studied by SEM and AFM, Correlations between Temperature Conditions of Deposition Processes and Film Characteristics Were Found.

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Periodical:

Key Engineering Materials (Volume 508)

Pages:

215-219

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.508.215

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Online since:

March 2012

Authors:

E.S. Vikulova, K.V. Zherikova, L.N. Zelenina, T.P. Chusova, S.V. Sysoev, V. Shevtsov, A.P. Zubareva, N.B. Morozova, I.K. Igumenov

Keywords:

Diamines, Magnesium and Caesium β-Diketonate Derivatives, Mg- and Cs-Containing Films, MgO Films, MOCVD, TG, Vapour Pressure

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References

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