Effect of Precursor Supply on (100) and (001) Orientations of α-Al2O3 Film Prepared by Laser CVD

Kadokura Hokuto; Akihiko Ito; Teiichi Kimura; Takashi Goto

doi:10.4028/www.scientific.net/KEM.508.3

Paper Titles

Effect of Precursor Supply on (100) and (001) Orientations of α-Al₂O₃ Film Prepared by Laser CVD
p.3

Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization
p.7

Preparation of SiNO_f/BN High Temperature Wave-Transparent Composites by Precursor Infiltration and Pyrolysis Method
p.11

Preparation of SiAlON-cBN Composites Using Ni Nanoparticle Precipitated cBN Powders
p.17

Thermal Conductivity Design and Evaluation of Zirconium Phosphate Bonded Silicon Nitride Porous Ceramics
p.21

Preparation of Nano-Sized ZrO₂ Powders by Polyvinyl Alcohol-Gel Method
p.27

Effect of Heating Rate on the Synthesis and Sintering of Ternary Carbide Zr₂Al₃C₄ through Spark Plasma Sintering
p.32

Densification and Microstructure of Monolithic TiN and TiB₂ Fabricated by Spark Plasma Sintering
p.38

HomeKey Engineering MaterialsKey Engineering Materials Vol. 508Effect of Precursor Supply on (100) and (001)...

Effect of Precursor Supply on (100) and (001) Orientations of α-Al₂O₃ Film Prepared by Laser CVD

Abstract:

Α-Al₂O₃ Films Were Prepared by Laser Chemical Vapor Deposition and the Effects of Precursor Evaporation Temperature (T_vap) and Oxygen Gas Flow Rate (FRo) on Phase and Orientation of Al₂o₃ Films Were Investigated. at T_vap = 413 K, (100)-Oriented α-Al₂O₃ and θ-Al₂O₃ Were Codeposited. the Amount of θ-Al₂O₃ Increased with Increasing FRo. at T_vap = 433–443 K, α-Al₂O₃ Films Showed a (001) Orientation. (100)- and (001)-Oriented α-Al₂O₃ Films Had a Rectangular- and Hexagonal-Shaped Grains, Respectively, and Showed a Columnar in Cross Section. Grain Size of (100)- and (001)-Oriented α-Al₂O₃ Films Decreased from 10 to 2 μm with Increasing FRo from 0.085 to 0.85 Pa m³ s⁻¹. Deposition Rate Increased from 100 to 300 μm h⁻¹ with Increasing T_vap from 413 to 443 K.