Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization

M.S. Lebedev

doi:10.4028/www.scientific.net/KEM.508.7

Paper Titles

Effect of Precursor Supply on (100) and (001) Orientations of α-Al₂O₃ Film Prepared by Laser CVD
p.3

Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization
p.7

Preparation of SiNO_f/BN High Temperature Wave-Transparent Composites by Precursor Infiltration and Pyrolysis Method
p.11

Preparation of SiAlON-cBN Composites Using Ni Nanoparticle Precipitated cBN Powders
p.17

Thermal Conductivity Design and Evaluation of Zirconium Phosphate Bonded Silicon Nitride Porous Ceramics
p.21

Preparation of Nano-Sized ZrO₂ Powders by Polyvinyl Alcohol-Gel Method
p.27

Effect of Heating Rate on the Synthesis and Sintering of Ternary Carbide Zr₂Al₃C₄ through Spark Plasma Sintering
p.32

Densification and Microstructure of Monolithic TiN and TiB₂ Fabricated by Spark Plasma Sintering
p.38

HomeKey Engineering MaterialsKey Engineering Materials Vol. 508Thin-Film Compositions on Base of Hafnium Dioxide...

Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization

Abstract:

Structures to Be Based on Hafnium Dioxide Are Regarded as the Most Perspective High-K Dielectric for Integration in MOS-Technology, Carbon Nanotubes Transistors. MOCVD (Metal-Organic Chemical Vapor Deposition) Techniques of HfO₂, Al₂O₃ and (Al₂O₃)_x(HfO₂)1-X Thin Films Were Applied Using Metal-Organic Substances as the Precursors. Dependences of Growth Rates on Process Parameters Were Studied. The Chemical Structure and Properties of the Films and Electrophysical Characteristics of the Test Structures Were Investigated.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 508)

Pages:

7-10

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.508.7

Citation:

Cite this paper

Online since:

March 2012

Authors:

M.S. Lebedev

Keywords:

Carbon Clusters, Ellipsometry, Interface, MOCVD, Thin Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T.P. Smirnova, V.A. Volodin, M.S. Lebedev, V.I. Belyi, Raman scattering spectroscopy of inclusioms of carbon in Al2O3 films and its solid solutions with HfO2, Opt. Spectrosc. 110 (2011) 55-59.

DOI: 10.1134/s0030400x11010188

Google Scholar

[2] T.P. Smirnova, V.V. Kaichev, L.V. Yakovkina, V.I. Kosyakov, S.A. Beloshapkin, F.A. Kusnetsov, M.S. Lebedev, V.A. Gritsenko, Composition and structure of hafnia films on silicon, Inorg. Mater. 44 (2008) 965-970.

DOI: 10.1134/s0020168508090124

Google Scholar

[3] V.V. Kaichev, Yu.V. Dubinin, T.P. Smirnova, M.S. Lebedev, A study of the structure of (HfO2)x(Al2O3)1-x/Si films by X-ray photoelectron spectroscopy, J. Struct. Chem. 52 (2011) 480-487.

DOI: 10.1134/s002247661103005x

Google Scholar

[4] T.P. Smirnova , M.S. Lebedev, N.B. Morozova, P.P. Semyannikov, K.V. Zherikova, V.V. Kaichev, Yu.V. Dubinin, MOCVD and physicochemical characterization of (HfO2)x(Al2O3)1-x thin films, Chem. Vap. Deposition 16 (2010) 185-190.

DOI: 10.1002/cvde.201006840

Google Scholar

[5] M.S. Lebedev, Profile of the refractive index distribution over the depth of (HfO2)x(Al2O3)1-x films, Opt. Spectrosc. 107, (2009) 776-779.

DOI: 10.1134/s0030400x09110149

Google Scholar