Synthesis of In2Se3/CuSe Composite Powder by Solvothermal Method

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Abstract:

The In2Se3/CuSe composite powders with the size in the range of 2-8µm for solar cell were successfully synthesized via using relatively simple solvothermal method at atmospheric pressure by the reaction between InCI3.4H2O, CuCI2.2H2O and Selenious acid and hydrazine hydrate in ethylene glycol.The influences of reaction temperature, reaction time, concentration of solution on the phase and morphology of In2Se3/CuSe composite powders were investigated. The phase and morphology of the products hSubscript textave been well studied by X-ray diffraction (XRD)and scanning electron microscope (SSubscript textEM) techniques.The study revealed that under the conditions of solvothermal method at atmospheric pressure, relative pure In2Se3 and CuSe powder were synthesized at temperatures of 160°C and 100°C respectively. The In2Se3/CuSe of irregular flake composite powders with the average size of 2-8µm had been obtained.The morphology of the products can be controlled by adding different kinds of surfactants such as PVP (Polyvinylpyrrolidone), CTAB (Hexadecyl trimethyl ammonium Bromide) and so on.

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Key Engineering Materials (Volumes 512-515)

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211-214

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June 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Peng, D.T. Schoen, S. Meister, X.F. Zhang, Y. Cui, Synthesis and Phase Transformation of In2Se3 and CuInSe2 Nanowires, J. Am. Chem. Soc. 129 (2007) 34-35.

Google Scholar

[2] R. Scheer, T. Walter, H.W. Schock, M.L. Fearheiley, H.J. Lewerenz, CuInS2 based thin film solar cell with 10.2% efficiency, Appl. Phys. Lett. 63 (1993) 3294-3296.

DOI: 10.1063/1.110786

Google Scholar

[3] K. Ellmer, J. Ines, J. Klaer, Copper indium disulfide solar cell absorbers prepared in a one step process by reactive magnetron sputtering from copper and indium targets, Thin Solid Films. 413 (2002) 92-97.

DOI: 10.1016/s0040-6090(02)00355-3

Google Scholar

[4] J. Piekoszewski, J.J. Loferski, R. Beaulieu, J. Beall, B. Roessler, J. Shewchun, RF-sputtered CuInSe2 thin films, Sol. Energy Mater. 2 (1980) 363-372.

DOI: 10.1016/0165-1633(80)90012-x

Google Scholar

[5] F.R. White, A.H. Clark, M.C. Graf, S P. Grindle, L.L. Kazmerski, Growth of CuInSe2 films using molecular beam epitaxy, J. Vac. Sci. Technol. 16 (1979) 287-289.

DOI: 10.1116/1.569928

Google Scholar

[6] C.D. Lokhande, G. Hodes, Preparation of CuInSe2 and CuInS2 films by reactive annealing in H2Se OR H2S, Sol. Cells. 21 (1987) 215-224.

DOI: 10.1016/0379-6787(87)90121-9

Google Scholar

[7] S.C. Park, D.Y. Lee, B.T. Ahn, K.H. Yoon, J. Song, Fabrication of CuInSe2 films and solar cells by the sequential evaporation of In2Se3 and Cu2Se binary compounds, Sol. Energy Mater. Sol. Cells. 69 (2001) 99-105.

DOI: 10.1016/s0927-0248(00)00382-2

Google Scholar

[8] S.H. Kwon, S.C. Park, B.T. Ahn, K.H. Yoon, J. Song, Effect of CuIn3Se5 layer thickness on CuInSe2 thin films and devices, Sol. Energy. 64 (1998) 55-60.

DOI: 10.1016/s0038-092x(98)00024-3

Google Scholar

[9] Q. Yang, K.B. Tang, C.R. Wang, J. Zuo, D.Y. Zhang, Y.T. Qian, A hexane solution deposition of SnS2 films from tetrabutyltin via a solvothermal route at moderate temperature, Thin Solid Films. 436 (2003) 203-207.

DOI: 10.1016/s0040-6090(03)00618-7

Google Scholar