Evolution of Defect Photoluminescence in Annealed N-Rich a-SiNx:H Films

Rui Huang; Jie Song; Yan Qing Guo; Chao Song; Xiang Wang

doi:10.4028/www.scientific.net/KEM.531-532.234

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 531-532Evolution of Defect Photoluminescence in Annealed...

Evolution of Defect Photoluminescence in Annealed N-Rich a-SiN_x:H Films

Abstract:

The N-rich a-SiNx:H films were deposited on Si substrates by very high frequency plasma enhanced chemical vapor deposition technique at a low temperature of 250 °C. Strong blue photoluminescence (PL), which originates from nitrogen dangling bond, can be observed in the as-deposited samples. The dependence of defect PL on annealing temperature was systematically investigated. The PL spectra reveal that the PL peak is almost independent of the annealing temperatures while the luminescence intensity rapidly decreases with the annealing temperature increasing from 400°C to 600°C. However, higher annealing temperatures over 700 °C results in an enhancement of luminescence intensity. Based on the relationship between PL spectra and bonding configurations of the samples, the evolution of defect PL with annealing temperatures was briefly discussed.

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Key Engineering Materials (Volumes 531-532)

Pages:

234-237

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.531-532.234

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Online since:

December 2012

Authors:

Rui Huang, Jie Song, Yan Qing Guo, Chao Song, Xiang Wang

Keywords:

Defect, Photoluminescence (PL), Silicon Nitride

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