The Preparation and Characterization of Copper Silicon Alloy Films

Abstract:

In this paper, the fabrication,physical and electrochemical properties of copper silicon alloy film were systematically studied and the optimized preparation conditions were obtained.When KrF excimer laser (λ=248 nm) repetition rate is 10Hz, laser energy is 260mJ,vacuum is 10-5Pa, target and substrate revolution per minute of target is 10, substrate temperature is 300°C and deposition time is 1.0h, as-deposited film from Si target and Cu substrate is obtained by pulsed laser deposition.The XRD pattern showed that as-deposited film is cubic stucture of Cu9Si, SEM images showed that as-deposited film has regular surface, particle size is about 300nm and particle size distribution is in narrow range.And the same time the electrochemical properties of as-deposited film showed good cycleability.

• Periodical: Key Engineering Materials (Volume 537)
• Pages: 288-291
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.537.288
• Online since: January 2013
• Authors: Xiu Li Feng, Bi Jin Li
• Keywords: Copper-Silicon Alloys, Pulsed Laser Deposition (PLD), Thin-Film Batteries

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