Two-Dimensional Silicon Nitride Photonic Crystal Band Gap Characteristics

Shou Xiang Chen; Xiu Lun Yang; Xiang Feng Meng; Yu Rong Wang; Lin Hui Wang; Guo Yan Dong

doi:10.4028/www.scientific.net/KEM.538.201

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 538Two-Dimensional Silicon Nitride Photonic Crystal...

Two-Dimensional Silicon Nitride Photonic Crystal Band Gap Characteristics

Abstract:

Plane-wave expansion method was employed to analyze the photonic band gap in two-dimensional silicon nitride photonic crystal. The effects of filling ratio and lattice structure type on the photonic band gap were studied. The results showed that two-dimensional dielectric cylinder type silicon nitride photonic crystal only has TE mode band gap, while, the air column type photonic crystal has complete band gap for TE and TM modes simultaneously. The distribution of band gap can be influenced by the filling ratio of dielectric materials and the lattice type. It is shown that the triangular lattice structure is much easier to form band gap than square lattice structure.

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Periodical:

Key Engineering Materials (Volume 538)

Pages:

201-204

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.538.201

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Online since:

January 2013

Authors:

Shou Xiang Chen, Xiu Lun Yang, Xiang Feng Meng, Yu Rong Wang, Lin Hui Wang, Guo Yan Dong

Keywords:

Photonic Band Gap, Photonic Crystal (PC), Plane-Wave Expansion Method

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