Electrical Characteristics of Bismuth Titanate Ceramics and Glass-Ceramics, Containing SiO₂ and Nd₂O₃ as Additives

Abstract:

Bismuth-titanate ceramics containing SiO₂ and Nd₂O₃ as additives are synthesized by melt quenching method in the system Bi₂O₃-TiO₂-Nd₂O₃-SiO₂ at temperature 1450 oC. By X-ray diffraction analysis are determined the crystal phases participating in the materials: Bi₄Ti₃O₁₂, Bi₁₂TiO₂₀ and δ-Bi₂O₃ . The addition of SiO₂ allows to control the glass formation ability of the supercooled melts. The addition of Nd₂O₃ stimulates the thermal stability of the materials due to formation of solid solutions Bi_4-xNd_xTi₃O₁₂. Measurements of the electrical conductivity, capacitance and dielectric losses of selected samples are performed by DC resistible bridge and digital capacity meter (with frequency of 1 kHz) using two-terminal method and a suitable sample holder with graphite electrodes. It is established that for the investigated samples the activation energy of conductivity is in the range 1 – 1,3 eV, dielectric permittivity from 1000 to 3000 at (at 400 oC) and dielectric losses tgδ are between 0,0002 and 0,1.

• Periodical: Key Engineering Materials (Volume 538)
• Pages: 233-237
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.538.233
• Online since: January 2013
• Authors: Stanislav S. Slavov, Milena Z. Krapchanska, Elena P. Kashchieva, Svetlin B. Parvanov, Yanko B. Dimitriev
• Keywords: Bismuth Titanate Ceramics, Electrical Characteristics, Melt Quenching, Microstructure

References

[1] C. Araujo, J. Cuchiaro, L. Mc Milan, M. Scott, J. Scott, Fatigue free-ferroelectric capacitors with platinum electrodes, Letters to Nature, 374 (1995) 627-629.

DOI: 10.1038/374627a0

[2] B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, W. Jo, Lanthanum-substituted bismuth titanate for use in non-volatile memories, Letters to Nature, 401 (1999) 682 – 684.

DOI: 10.1038/44352

[3] H. Maiwa, N. Lizawa, D. Togawa, W. Sakamoto, M. Yamada, Shin-ichi Hirano and T. Hayashi, Electromechanical properties of Nd-doped Bi4Ti3O12 films: A candidate for lead-free thin film piezoelectics, J. Appl. Phys. A 82 [11], (2003) 1760-1762.

DOI: 10.1063/1.1560864

[4] Damjanovic, M. Demartin-Maeder, P. Duran Martin, C. Voisard, and N. Setter, J. Appl. Phys., 90 (11), (2001) 5708.

DOI: 10.1063/1.1412272

[5] S. Kojima, A. Hushur, F. Jiang, S. Hamazaki. M. Takashige, M. Jang, S. Shimada, Crystallization of amorphous bismuth titanate, J. Non-Cryst. Solids, 293-295 (2001) 250-254.

DOI: 10.1016/s0022-3093(01)00828-6

[6] K. Sunahara, J. Yano, K. Kakegawa, Preparation of Bi4Ti3O12 particles by crystallization from glass, J. Eur. Cer. Soc., 26 (2006) 623-626.

DOI: 10.1016/j.jeurceramsoc.2005.07.025

[7] K. Gerth, Ch. Russel, Crystallization of Bi4Ti3O12 from glasses in the system Bi2O3/TiO2/B2O3, J. Non-Cryst. Solids, 221 (1997) 10-17.

DOI: 10.1016/s0022-3093(97)00306-2

[8] K. Gerth, Ch. Russel, Crystallization of Bi3TiNbO9 from glasses in the system Bi2O3/TiO2/Nb2O5/B2O3/SiO2, J. Non-Cryst. Solids, 243 (1999) 52-60.

DOI: 10.1016/s0022-3093(98)00808-4

[9] T. M. Bruton, Study of the liquidus in the system Bi2O3-TiO2, J. Sol. State Chem., 9 (1974) 173-175.

[10] S. Kunej, S, Skapin, and D. Suvorov, Phase Relations in the Pyrochlore-Rich Part of the Bi2O3-TiO2-Nd2O3 System, J. Am. Ceramic Society, 92 [10], (2009) 2373-2377.

DOI: 10.1111/j.1551-2916.2009.03207.x

[11] Qing-Yuan Tang, Yan-Mei Kan, Pei-Ling Wang, Yao-Gang Li, Guo-Jun Zhang, Nd/V Co-Doped Bi4Ti3O12 Power Prepared By Molten Salt Synthesis, J. Am. Ceramic Society, 90 [10], (2007), 3353-3356

DOI: 10.1111/j.1551-2916.2007.01916.x

[12] T. Kojima, T. Sakai, T. Watanade and H. Funakudo, Large Remanent Polarization of (Bi,Nd)4Ti3O12 Epitaxial Thin Films Grown by Metalorganic Chemical Vapor Deposition, Appl. Phys. Lett., 80 [15] 2746 8 (2002).

DOI: 10.1063/1.1468914

[13] J. K. Kim, S. S. Kim, W. J. Kim, Effects of annealing conditions on the electrical properties of Bi4-xNdxTi3O12 (x=0.46) thin films processed at low temperature, J. Appl. Phys. A 82, (2006), 737-740.

DOI: 10.1007/s00339-005-3457-0

[14] W. Sakamoto, M. Yamada, N. Iizawa, Yu-Ki Muzutani, D. Togaza, K. Kikuta, T. Yogo, T. Hayashi and Shin-Ichi Hurano, Preparation and Properties of Bi4-xNdxTi3O12 Thin Films by Chemical Solution Deposition, J. Electroceramics, 13, (2004), 339-343.

DOI: 10.1007/s10832-004-5123-x

[15] D. Wu, A. Li, N. Ming, Structure and electrical properties of of Bi3.15Nd0,85Ti3O12 ferroelectric thin films, J. Appl. Phys. A 95 [8], (2004), 4275-4281.

DOI: 10.1063/1.1655678

[16] M. Demartin-Maeder and Damjanovic, Piezoelektric Materials in devices, edited by N. Setter (2002), p.389.

[17] M. Chen, Z.L. Liu, Y. Wang, C.C. Wang, X.S. Yang, K.L. Yao: Ferroelectric properties and microstructures of Nd2O3 – doped Bi4Ti3O12 ceramics, Phys. Stat. Sol. A – Appl. Res. 200 (2003) 446-450.

DOI: 10.1002/pssa.200306673

[18] Jose L. Pineda-Flores, E. Chavira, J. Reyes-Gasga, A.M. Gonzalez, A. Huanosta-Tera, Synthesis and dielectric characteristics of the layered structure Bi4-xRxTi3O12 (Rx= Pr, Nd, Gd, Dy), J. Europ. Ceramic Society, 23 (2003) 839-850

DOI: 10.1016/s0955-2219(02)00226-1

[19] G. Suyal, S.S.N. Bharadwaja, M. Cantoni, D. Damianovic and N. Setter, Properties of chemical solution deposited polycrystalline neodymium-modified Bi4Ti3O12, J. Electroceramics, 9, (2002), 187-192.

[20] N.V. Giridharan, M. Subramanian, R. Jayavel, Enhancement of polarisation in bismuth titanate thin films co-modified by La and Nd for nan-volatile memory application, Appl. Phys. A 83, (2006), 123-126.

DOI: 10.1007/s00339-005-3469-9

[21] Jia Li, Jun Yu, Gang Peng, Yunbo Wang and Wenli Zhou, Effect of TiO2 seeding layer on crystalline orientation and ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films fabricated by a sol-gel method, J. Am. Ceramic Society, 90 [10], (2007) 3220-3223.

DOI: 10.1111/j.1551-2916.2007.01880.x

[22] Yunyi Wu, Duanming Zhang, Jun Yu Yunbo Wang, Microstructure and electrical properties of Bi2O3- excess Bi3.25La0.75Ti3O12 ferroelctric ceramics, Mathematics Chem. and Phys. 113 (2009) 422-427.

DOI: 10.1016/j.matchemphys.2008.07.103

[23] Lili Jiao, Zongming Liu, Guangda HU, Shougang Cui, Zhijie Jin, Qi Wang, Weibing Wu and Changhong Yang, Low-temperature fabrication and enhanced ferro- and piezoelectric properties of Bi3.7Nd0.3Ti3O12 films on indium tin oxide/glass substrates, J. Am. Ceramic Society, 92 [7], (2009) 1556-1559.

DOI: 10.1111/j.1551-2916.2009.03072.x

[24] M. Krapchanska, Y. Dimitriev, R. Iordanova, Phase formation in the system Bi2O3-TiO2-SiO2, J. Univ. Chem. Techol. Met. 43 (2006) 307.

[25] E. Kashchieva, M. Krapchanska, S. Slavov, Y. Dimitriev Effect of synthesis route on the microstructure of SiO2 doped bismuth titanate ceramics, Process. Appl. Ceram., 3 [4] (2009) 171–175.

DOI: 10.2298/pac0904171k

[26] Stanislav S. Slavov, Milena Z. Krapchanska, Elena P. Kashchieva, Yanko B. Dimitriev, Electrical characteristics of bismuth titanate ceramics containing SiO2 and Nd2O3, Process. Appl. Ceram., 4 [1] (2010) 39–43.

DOI: 10.2298/pac1001039s

[27] Stanislav S. Slavov, Milena Z. Krapchanska, Elena P. Kashchieva, Svetlin B. Parvanov, Yanko B. Dimitriev, Dielectric properties of bismuth titanate ceramics containing SiO2 and Nd2O3 as additives, Process. Appl. Ceram., in press.

DOI: 10.2298/pac1203117s