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Abnormal Phenomena and Mechanisms for Silicon Photomultipliers

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Abstract:

Some deviant breakdown-quenching characteristics of silicon photomultipliers are demonstrated and their physical mechanisms are explored. “Twice breakdown” phenomenon, “flat-topped” avalanche pulses are analyzed. These characteristics are explained in terms of avalanche threshold current based on the Haitz’s equivalent circuit model. The results show that the maximum over-voltage for a normal operating silicon photomultiplier equals the product of the avalanche threshold current and the quenching resistor of the avalanche photo-diode (APD) pixel, approximately.

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Progress in Functional Materials View Preview

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Periodical:

Key Engineering Materials (Volume 538)

Pages:

77-80

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.538.77

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Online since:

January 2013

Authors:

Guo Qing Zhang, De Jun Han, Chang Jun Zhu, Xue Jun Zhai

Keywords:

Avalanche Photo-Diode, Breakdown-Quenching Characteristics, Multi-Pixel Photon Counter, Silicon Photomultiplier, Single Photon Detector

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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