Anodization Current Density Independent Photoluminescence of Porous Silicon

Yuan Ming Huang; Bao Gai Zhai; Qing Lan Ma

doi:10.4028/www.scientific.net/KEM.538.85

Paper Titles

Effect of Precursor Concentration on the Ideal ZrO₂ Sols and Thin Films
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Synthesis and Thermal-Optic Properties of Azo Polyurethane Containing Chiral Unit
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Abnormal Phenomena and Mechanisms for Silicon Photomultipliers
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The Preparation of p-PS and its Photoluminescence Properties
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Anodization Current Density Independent Photoluminescence of Porous Silicon
p.85

Experimental and Simulation Study of Microhardness Indentation of Solid Oxide Fuel Cell Using Progressive Damage Material Model
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Thermo-Sensitive Nanogated System Based on Polymer-Modified Mesoporous Silica Hybrid Nanoparticles
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Performance Optimization of AIN Films Using Self-Prepared AIN Target
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Simulation and Analysis of Electromagnetic Wave Manipulation by Material with Permittivity and Permeability Very near Zero
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Anodization Current Density Independent Photoluminescence of Porous Silicon

Abstract:

Porous silicon (PS) is usually prepared by means of the anodization under constant current density, and fabrication of PS is a key step towards the realization of all-silicon electronic devices. It is a general belief that the photoluminescent properties of electrochemically etched PS depend on the anodization current density. In this work, we electrochemically prepared a series of PS films in the electrolyte of hydrofluoric acid by varying anodizing current density in the range of 1-70 mA/cm2. In spite of the different anodizing current density, the peak wavelength of the photoluminescence spectrum of the electrochemically anodized PS does not depend on the anodization current density. SEM has been utilized to characterize the morphology of the prepared PS films, and the mechanism is discussed for the anodization current independent photoluminescence of PS.