Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications

Carlos Morón; Alfonso Garcia; Enrique Tremps; Jose Andrés Somolinos

doi:10.4028/www.scientific.net/KEM.543.167

Paper Titles

Electrical Characterization of MOS Structures with Silicon Nanocrystals Suitable for X-Ray Detection
p.150

Thermally Stimulated Discharge Currents of Poly(acrylonitrile-co-acrylic Acid)-Polypyrrole Composites
p.154

Hydrogen Detection with Semimetal Graphite-ZnO (InP,GaN) Schottky Diodes
p.159

Graphic LCD for Lightweight Electric Vehicles
p.163

Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications
p.167

A Generalized Method for Flat Plates Impact Detection and Location
p.171

Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor
p.176

Investigation of Gas Sensing Materials SnO₂/In₂O₃ Composite Nanofibers Treated by Oxygen Plasma
p.180

Speciﬁc Conductance Characteristic of Force Sensing Resistor (FSR) with Custom Made Single-Gap Conductive Contacts
p.184

HomeKey Engineering MaterialsKey Engineering Materials Vol. 543Anisotropic Magnetoresistive Study in Bilayer...

Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications

Abstract:

Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni₈₀Fe₂₀/Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.

You might also be interested in these eBooks

Materials and Applications for Sensors and Transducers II

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 543)

Pages:

167-170

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.543.167

Citation:

Cite this paper

Online since:

March 2013

Authors:

Carlos Morón, Alfonso Garcia, Enrique Tremps, Jose Andrés Somolinos

Keywords:

Anisotropic, Bilayer, Magnetoresistance

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] U. Dibbern, Magnetoresistive sensors, in: W. GoK pel, J. Hesse, J. N. Zemel (Eds. ), Sensors, Volume 5: Magnetic Sensors (R. Boll, K. J. Overshott (Vol. Eds. ), VCH Verlagsgesellschaft, Weinheim, pp.341-380 (1989).

DOI: 10.1002/9783527620166.ch9

Google Scholar

[2] D.J. Mapps, Y.Q. Ma, M.A. Akhter, Sensors Actuators A 81, 60 (2000).

Google Scholar

[3] S.S. Lee, D.G. Hwang, C.M. Park, K.A. Lee, J.R. Lee, J. Appl. Phys. 81, 5298 (1997).

Google Scholar

[4] P. Ripka, M. Vopalenski, A. Platil, M. Döscher, K. -M.H. Lenssen, H. Hauser, J. Magn. Mag. Mat. 254-255, 639 (2003).

DOI: 10.1016/s0304-8853(02)00927-7

Google Scholar

[5] E. Pina, C. Prados, A. Hernando. J. Mag. Mag. Mat. 272-276, 1905 (2004).

Google Scholar