Electrical Characterization of MOS Structures with Silicon Nanocrystals Suitable for X-Ray Detection

David Mateos; Nicola Nedev; Diana Nesheva; Mario Curiel; Emil Manolov; Abraham Arias; Oscar Contreras; Benjamin Valdez; Zelma Levi; Jesus M. Siqueiros

doi:10.4028/www.scientific.net/KEM.543.150

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 543Electrical Characterization of MOS Structures with...

Electrical Characterization of MOS Structures with Silicon Nanocrystals Suitable for X-Ray Detection

Abstract:

Metal-Oxide-Semiconductor structures with silicon nanocrystals in the oxide layer are prepared and characterized by Transmission Electron Microscopy and electrical measurements. High temperature annealing of SiO_1.15 films at 1000 °C for 30 or 60 min leads to formation of silicon nanocrystals with diameters of 2-3 or 4-6 nm. The processes used to obtain the multilayer gate dielectric and to grow nanocrystals do not deteriorate the properties of the cSi wafer/thermal SiO₂ interface. For the interface defect density and the fixed oxide charge values 10¹⁰ cm^-2 eV^-1 and ~ 10¹⁰ cm^-2 were obtained.

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Periodical:

Key Engineering Materials (Volume 543)

Pages:

150-153

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.543.150

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Online since:

March 2013

Authors:

David Mateos, Nicola Nedev, Diana Nesheva, Mario Curiel, Emil Manolov, Abraham Arias, Oscar Contreras, Benjamin Valdez, Zelma Levi, Jesus M. Siqueiros

Keywords:

Interface Defects, MOS Structure, Si Nanocrystals, X-Ray Dosimeters

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References

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