Charge Storage Characteristics of Ni-NiOx Core-Shell Nanocrystals Embedded in SiO2 Gate Oxide

He Nan Ni; Liang Cai Wu; Chun Hui; Ze Bo Fang; Zhi Bin Li

doi:10.4028/www.scientific.net/KEM.562-565.731

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 562-565Charge Storage Characteristics of Ni-NiOx...

Charge Storage Characteristics of Ni-NiO_x Core-Shell Nanocrystals Embedded in SiO₂ Gate Oxide

Abstract:

The memory characteristics of Ni-NiOx core-shell nanocrystals (NCs) in the metal-oxide-semiconductor (MOS) capacitor structure were investigated. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) confirm the formation of the spherically shaped, well isolated, and uniformly distributed Ni NCs surrounded by NiOx (~1nm) in SiO2 gate oxide. The Ni-NiOx NCs embedded in SiO2 exhibited a large memory window of 9.8 V as well as efficient programming/erasing speed and improved retention characteristics of about 10 years. A possible band model needed for injection efficiency of carriers was given by considering the electron/hole barrier width and the additional interface states through the NiOx shell layer.

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Key Engineering Materials (Volumes 562-565)

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731-736

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.562-565.731

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Online since:

July 2013

Authors:

He Nan Ni, Liang Cai Wu, Chun Hui, Ze Bo Fang, Zhi Bin Li

Keywords:

NC Nonvolatile Memory, Ni-NiO_x Core-Shell NCs, P/E Speed, Retention Characterisitics

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